Inventor
BALSTER SCOTT
DE21 patents
⚠️ This page may combine multiple inventors who share the name “BALSTER SCOTT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
18 patentsUS7883977B2Feb 8, 2011
Advanced CMOS using super steep retrograde wells
TEXAS INSTRUMENTS INC124 citations99
US7655523B2Feb 2, 2010
Advanced CMOS using super steep retrograde wells
TEXAS INSTRUMENTS INC124 citations99
US7501324B2Mar 10, 2009
Advanced CMOS using super steep retrograde wells
TEXAS INSTRUMENTS INC121 citations99
US7199430B2Apr 3, 2007
Advanced CMOS using super steep retrograde wells
TEXAS INSTRUMENTS INC138 citations99
US7064399B2Jun 20, 2006
Advanced CMOS using super steep retrograde wells
TEXAS INSTRUMENTS INC148 citations99
US6958523B2Oct 25, 2005
On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits
TEXAS INSTRUMENTS INC38 citations92
US7422972B2Sep 9, 2008
On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits
TEXAS INSTRUMENTS INC13 citations84
US7130182B2Oct 31, 2006
Stacked capacitor and method for fabricating same
TEXAS INSTRUMENTS INC6 citations73
US6894366B2May 17, 2005
Bipolar junction transistor with a counterdoped collector region
TEXAS INSTRUMENTS INC9 citations73
US10937905B2Mar 2, 2021
Transistor having double isolation with one floating isolation
TEXAS INSTRUMENTS INC2 citations72
US8012842B2Sep 6, 2011
Method for fabricating isolated integrated semiconductor structures
TEXAS INSTRUMENTS INC4 citations63
US7498639B2Mar 3, 2009
Integrated BiCMOS semiconductor circuit
TEXAS INSTRUMENTS INC2 citations62
US7217322B2May 15, 2007
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer
TEXAS INSTRUMENTS INC5 citations62
US7192838B2Mar 20, 2007
Method of producing complementary SiGe bipolar transistors
TEXAS INSTRUMENTS INC2 citations62
US7227241B2Jun 5, 2007
Integrated stacked capacitor and method of fabricating same
TEXAS INSTRUMENTS INC4 citations61
US7144789B2Dec 5, 2006
Method of fabricating complementary bipolar transistors with SiGe base regions
TEXAS INSTRUMENTS INC2 citations60
US7118981B2Oct 10, 2006
Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor
TEXAS INSTRUMENTS INC0 citations52
US7736986B2Jun 15, 2010
Integrated stacked capacitor and method of fabricating same
TEXAS INSTRUMENTS INC0 citations51