Inventor
LEE KYU-HYUN
KR29 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYU-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS6262470B1Jul 17, 2001
Trench-type insulated gate bipolar transistor and method for making the same
SAMSUNG ELECTRONICS CO LTD55 citations96
US6607955B2Aug 19, 2003
Method of forming self-aligned contacts in a semiconductor device
SAMSUNG ELECTRONICS CO LTD25 citations92
US6451651B1Sep 17, 2002
Method of manufacturing DRAM device invention
SAMSUNG ELECTRONICS CO LTD44 citations92
US6168992B1Jan 2, 2001
Methods for forming electrodes including sacrificial layers
SAMSUNG ELECTRONICS CO LTD29 citations92
US6607983B1Aug 19, 2003
Method of processing a defect source at a wafer edge region in a semiconductor manufacturing
SAMSUNG ELECTRONICS CO LTD44 citations90
US7153727B2Dec 26, 2006
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US6432795B1Aug 13, 2002
Method of fabricating a cylindrical capacitor storage node having HSG silicon on inner wall thereof in a semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations84
US6337275B1Jan 8, 2002
Method for forming a self aligned contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations84
US6890841B2May 10, 2005
Methods of forming integrated circuit memory devices that include a plurality of landing pad holes that are arranged in a staggered pattern and integrated circuit memory devices formed thereby
SAMSUNG ELECTRONICS CO LTD14 citations83
US6602773B2Aug 5, 2003
Methods of fabricating semiconductor devices having protected plug contacts and upper interconnections
SAMSUNG ELECTRONICS CO LTD11 citations66
US6730975B2May 4, 2004
DRAM device
SAMSUNG ELECTRONICS CO LTD3 citations63
US6235623B1May 22, 2001
Methods of forming integrated circuit contact holes using blocking layer patterns
SAMSUNG ELECTRONICS CO LTD3 citations63
US11715760B2Aug 1, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11239311B2Feb 1, 2022
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US6777812B2Aug 17, 2004
Semiconductor devices having protected plug contacts and upper interconnections
SAMSUNG ELECTRONICS CO LTD2 citations54
US9443734B2Sep 13, 2016
Semiconductor memory devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US11696436B2Jul 4, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
FAIRCHILD KOREA SEMICONDUCTOR LTD
3 patentsUS9685335B2Jun 20, 2017
Power device including a field stop layer
FAIRCHILD KOREA SEMICONDUCTOR LTD6 citations83
US10109719B2Oct 23, 2018
Power device and fabricating method thereof
FAIRCHILD KOREA SEMICONDUCTOR LTD2 citations66
US9960250B2May 1, 2018
Power device and method of manufacturing the same
FAIRCHILD KOREA SEMICONDUCTOR LTD0 citations51
FAIRCHILD KR SEMICONDUCTOR LTD
2 patentsUS6518624B2Feb 11, 2003
Trench-gate power semiconductor device preventing latch-up and method for fabricating the same
FAIRCHILD KR SEMICONDUCTOR LTD13 citations82
US7645659B2Jan 12, 2010
Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same
FAIRCHILD KR SEMICONDUCTOR LTD17 citations80