Inventor
HIJZEN ERWIN A
BE30 patents
⚠️ This page may combine multiple inventors who share the name “HIJZEN ERWIN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KONINKL PHILIPS ELECTRONICS NV
13 patentsUS6441454B2Aug 27, 2002
Trenched Schottky rectifiers
KONINKL PHILIPS ELECTRONICS NV103 citations98
US6936890B2Aug 30, 2005
Edge termination in MOS transistors
KONINKL PHILIPS ELECTRONICS NV32 citations92
US6833583B2Dec 21, 2004
Edge termination in a trench-gate MOSFET
KONINKL PHILIPS ELECTRONICS NV20 citations92
US6620669B2Sep 16, 2003
Manufacture of trench-gate semiconductor devices
KONINKL PHILIPS ELECTRONICS NV24 citations92
US6600194B2Jul 29, 2003
Field-effect semiconductor devices
KONINKL PHILIPS ELECTRONICS NV40 citations92
US6534823B2Mar 18, 2003
Semiconductor device
KONINKL PHILIPS ELECTRONICS NV25 citations92
US6515348B2Feb 4, 2003
Semiconductor device with FET MESA structure and vertical contact electrodes
KONINKL PHILIPS ELECTRONICS NV25 citations92
US6780714B2Aug 24, 2004
Semiconductor devices and their manufacture
KONINKL PHILIPS ELECTRONICS NV23 citations91
US7033889B2Apr 25, 2006
Trenched semiconductor devices and their manufacture
KONINKL PHILIPS ELECTRONICS NV15 citations84
US6521498B2Feb 18, 2003
Manufacture or trench-gate semiconductor devices
KONINKL PHILIPS ELECTRONICS NV15 citations79
US6518129B2Feb 11, 2003
Manufacture of trench-gate semiconductor devices
KONINKL PHILIPS ELECTRONICS NV16 citations79
US6559502B2May 6, 2003
Semiconductor device
KONINKL PHILIPS ELECTRONICS NV6 citations63
US6956264B2Oct 18, 2005
Trenched semiconductor devices and their manufacture
KONINKL PHILIPS ELECTRONICS NV4 citations62
NXP BV
12 patentsUS7538337B2May 26, 2009
Nanowire semiconductor device
NXP BV23 citations87
US7671390B2Mar 2, 2010
Semiconductor device and method for manufacture
NXP BV11 citations84
US7332398B2Feb 19, 2008
Manufacture of trench-gate semiconductor devices
NXP BV7 citations73
US7394144B2Jul 1, 2008
Trench semiconductor device and method of manufacturing it
NXP BV8 citations72
US7262460B2Aug 28, 2007
Vertical insulated gate transistor and manufacturing method
NXP BV7 citations72
US7696599B2Apr 13, 2010
Trench MOSFET
NXP BV6 citations63
US7671440B2Mar 2, 2010
Lateral field-effect transistor having an insulated trench gate electrode
NXP BV2 citations63
US7629647B2Dec 8, 2009
Trench MOS structure
NXP BV2 citations63
US7235842B2Jun 26, 2007
Insulated gate power semiconductor devices
NXP BV4 citations62
US7199010B2Apr 3, 2007
Method of maufacturing a trench-gate semiconductor device
NXP BV3 citations62
US7485534B2Feb 3, 2009
Method of manufacture of a trench-gate semiconductor device
NXP BV1 citations52
US7160793B2Jan 9, 2007
Edge termination in MOS transistors
NXP BV0 citations52
PHILIPS CORP
4 patentsUS6359308B1Mar 19, 2002
Cellular trench-gate field-effect transistors
PHILIPS CORP255 citations99
US6368921B1Apr 9, 2002
Manufacture of trench-gate semiconductor devices
PHILIPS CORP112 citations94
US6198210B1Mar 6, 2001
Electron tube having a semiconductor cathode with lower and higher bandgap layers
PHILIPS CORP4 citations61
US6064074AMay 16, 2000
Semiconductor cathode and electron tube comprising a semiconductor cathode
PHILIPS CORP6 citations60