Inventor
NAM SANG-DON
KR17 patents
⚠️ This page may combine multiple inventors who share the name “NAM SANG-DON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS6380579B1Apr 30, 2002
Capacitor of semiconductor device
SAMSUNG ELECTRONICS CO LTD172 citations99
US6500763B2Dec 31, 2002
Method for manufacturing an electrode of a capacitor
SAMSUNG ELECTRONICS CO LTD72 citations96
US6248640B1Jun 19, 2001
Method for forming capacitor of semiconductor device using high temperature oxidation
SAMSUNG ELECTRONICS CO LTD78 citations95
US7482616B2Jan 27, 2009
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD39 citations92
US6844583B2Jan 18, 2005
Ferroelectric memory devices having expanded plate lines
SAMSUNG ELECTRONICS CO LTD13 citations92
US8026543B2Sep 27, 2011
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US6952028B2Oct 4, 2005
Ferroelectric memory devices with expanded plate line and methods in fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations73
US7622379B2Nov 24, 2009
Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7517703B2Apr 14, 2009
Method for forming ferroelectric memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US7208367B2Apr 24, 2007
Methods of fabricating ferroelectric memory devices having expanded plate lines
SAMSUNG ELECTRONICS CO LTD2 citations62
US8569862B2Oct 29, 2013
Integrated circuit devices with crack-resistant fuse structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US7285810B2Oct 23, 2007
Ferroelectric memory devices having expanded plate lines
SAMSUNG ELECTRONICS CO LTD0 citations52
AHN SANG-HOON
3 patentsUS9224593B2Dec 29, 2015
Method of manufacturing a semiconductor device having a porous, low-k dielectric layer
AHN SANG-HOON2 citations61
US8404579B2Mar 26, 2013
Methods of forming integrated circuit devices with crack-resistant fuse structures
AHN SANG-HOON0 citations51
US8524615B2Sep 3, 2013
Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer
AHN SANG-HOON0 citations40