Inventor

AHN TAE-HYUK

KR36 patents

⚠️ This page may combine multiple inventors who share the name “AHN TAE-HYUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AHN TAE-HYUK

SAMSUNG ELECTRONICS CO LTD

Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method

Semiconductor memory device and fabricating method thereof

Electronic devices including electrodes with insulating spacers thereon

Semiconductor memory device having self-aligned contacts and method of fabricating the same

Semiconductor memory device having self-aligned contact and fabricating method thereof

Semiconductor device with a self-aligned contact and a method of manufacturing the same

Method for manufacturing a capacitor structure of a semiconductor memory device

Plasma generating apparatus and method using modulation system

Method of forming a recess channel trench pattern, and fabricating a recess channel transistor

Semiconductor device having raised cell landing pad and method of fabricating the same

Method of forming a recess channel trench pattern, and fabricating a recess channel transistor

Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask

Method of etching insulating layer in semiconductor device

Method for preparing semiconductor including formation of contact hole using difluoromethane gas

Method of manufacturing integrated circuit device including recessed channel transistor

Metal contact structure in semiconductor device and method for forming the same

Methods of forming electronic devices including electrodes with insulating spacers thereon

Semiconductor memory device having self-aligned contacts and method of fabricating the same

Method of manufacturing a cylindrical storage node in a semiconductor device

Semiconductor memory device having local etch stopper and method of manufacturing the same

Method of forming a self-aligned contact, and method of fabricating a semiconductor device having a self-aligned contact

Electronic devices including electrode walls with insulating layers thereon

Method of manufacturing integrated circuit device including recessed channel transistor

Semiconductor memory device having local etch stopper and method of manufacturing the same

Methods of fabricating a semiconductor device

Methods of forming contact plugs in semiconductor devices

Method of manufacturing a semiconductor memory device

Method of manufacturing a semiconductor memory device

Method of manufacturing a semiconductor device with a self-aligned contact

Semiconductor memory device having self-aligned contact and fabricating method thereof

Methods of forming electronic devices including electrodes with insulating spacers thereon

Method for etching an object using a plasma and an object etched by a plasma

Method for forming a storage node of a capacitor

BAE YONG-KUG

Semiconductor device and method of fabricating the semiconductor device

SAMSUG ELECTRONICS CO LTD

Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate

SAMSUNG SEMICONDUCTOR TELE

Method for fabricating a semiconductor device by slope etching a polysiliow layer