Inventor
CLEMENTI CESARE
IT19 patents
⚠️ This page may combine multiple inventors who share the name “CLEMENTI CESARE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
14 patentsUS5422291AJun 6, 1995
Method of making an EPROM cell with a readily scalable interpoly dielectric
ST MICROELECTRONICS SRL45 citations94
US6509222B1Jan 21, 2003
Process for manufacturing electronic devices comprising nonvolatile memory cells of reduced dimensions
ST MICROELECTRONICS SRL23 citations92
US6114203ASep 5, 2000
Method of manufacturing a MOS integrated circuit having components with different dielectrics
ST MICROELECTRONICS SRL47 citations92
US5600166AFeb 4, 1997
EPROM cell with a readily scalable interpoly dielectric
ST MICROELECTRONICS SRL28 citations91
US5464784ANov 7, 1995
Method of fabricating integrated devices
ST MICROELECTRONICS SRL17 citations81
US6603171B2Aug 5, 2003
Electronic devices with nonvolatile memory cells of reduced dimensions
ST MICROELECTRONICS SRL7 citations73
US6255163B1Jul 3, 2001
Process for manufacturing selection transistors for nonvolatile serial-flash, EPROM, EEPROM and flash-EEPROM memories in standard or AMG configuration
ST MICROELECTRONICS SRL8 citations73
US5977586ANov 2, 1999
Non-volatile integrated low-doped drain device with partially overlapping gate regions
ST MICROELECTRONICS SRL11 citations73
US7125808B2Oct 24, 2006
Method for manufacturing non-volatile memory cells on a semiconductor substrate
ST MICROELECTRONICS SRL8 citations71
US6800901B2Oct 5, 2004
Process for the selective formation of salicide on active areas of MOS devices
ST MICROELECTRONICS SRL6 citations71
US6492234B1Dec 10, 2002
Process for the selective formation of salicide on active areas of MOS devices
ST MICROELECTRONICS SRL13 citations71
US6448138B1Sep 10, 2002
Nonvolatile floating-gate memory devices, and process of fabrication
ST MICROELECTRONICS SRL4 citations61
US7125807B2Oct 24, 2006
Method for manufacturing non-volatile memory cells on a semiconductor substrate
ST MICROELECTRONICS SRL1 citations49
US7326615B2Feb 5, 2008
Method for manufacturing electronic non-volatile memory devices integrated in a semiconductor substrate
ST MICROELECTRONICS SRL0 citations39
SGS THOMSON MICROELECTRONICS
5 patentsUS5856221AJan 5, 1999
Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC
SGS THOMSON MICROELECTRONICS59 citations96
US6248630B1Jun 19, 2001
Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC
SGS THOMSON MICROELECTRONICS24 citations92
US6004847ADec 21, 1999
Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC
SGS THOMSON MICROELECTRONICS44 citations92
US5798279AAug 25, 1998
Method of fabricating non-volatile memories with overlapping layers
SGS THOMSON MICROELECTRONICS17 citations83
US5568418AOct 22, 1996
Non-volatile memory in an integrated circuit
SGS THOMSON MICROELECTRONICS14 citations73