Inventor
GOEBEL BERND
DE25 patents
⚠️ This page may combine multiple inventors who share the name “GOEBEL BERND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS7109544B2Sep 19, 2006
Architecture for vertical transistor cells and transistor-controlled memory cells
INFINEON TECHNOLOGIES AG121 citations98
US6379978B2Apr 30, 2002
Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a magnetic field, and method for fabricating it
INFINEON TECHNOLOGIES AG98 citations96
US6853023B2Feb 8, 2005
Semiconductor memory cell configuration and a method for producing the configuration
INFINEON TECHNOLOGIES AG42 citations92
US6750095B1Jun 15, 2004
Integrated circuit with vertical transistors
INFINEON TECHNOLOGIES AG35 citations90
US7064373B2Jun 20, 2006
Architecture and fabrication method of a vertical memory cell
INFINEON TECHNOLOGIES AG11 citations83
US6579729B2Jun 17, 2003
Memory cell configuration and method for fabricating it
INFINEON TECHNOLOGIES AG8 citations74
US6436836B2Aug 20, 2002
Method of fabricating a DRAM cell configuration
INFINEON TECHNOLOGIES AG10 citations74
US7141845B2Nov 28, 2006
DRAM cell array and memory cell arrangement having vertical memory cells and methods for fabricating the same
INFINEON TECHNOLOGIES AG6 citations63
US6586795B2Jul 1, 2003
DRAM cell configuration whose memory cells can have transistors and capacitors with improved electrical properties
INFINEON TECHNOLOGIES AG6 citations63
US6977405B2Dec 20, 2005
Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it
INFINEON TECHNOLOGIES AG2 citations61
US6579758B2Jun 17, 2003
Method and installation for fabricating one-sided buried straps
INFINEON TECHNOLOGIES AG3 citations60
US6930325B2Aug 16, 2005
Test structure for improved vertical memory arrays
INFINEON TECHNOLOGIES AG0 citations40
SIEMENS AG
11 patentsUS6172391B1Jan 9, 2001
DRAM cell arrangement and method for the manufacture thereof
SIEMENS AG122 citations98
US6075265AJun 13, 2000
DRAM cell arrangement and method for its fabrication
SIEMENS AG82 citations96
US6118159ASep 12, 2000
Electrically programmable memory cell configuration
SIEMENS AG66 citations94
US6352894B1Mar 5, 2002
Method of forming DRAM cell arrangement
SIEMENS AG25 citations92
US6309930B1Oct 30, 2001
SRAM cell arrangement and method for manufacturing same
SIEMENS AG24 citations92
US6097049AAug 1, 2000
DRAM cell arrangement
SIEMENS AG38 citations91
US6376313B1Apr 23, 2002
Integrated circuit having at least two vertical MOS transistors and method for manufacturing same
SIEMENS AG14 citations84
US6087692AJul 11, 2000
DRAM cell configuration and method for its fabrication
SIEMENS AG17 citations84
US6044009AMar 28, 2000
DRAM cell arrangement and method for its production
SIEMENS AG8 citations73
US6566202B2May 20, 2003
Integrated circuit having at least two vertical MOS transistors and method for manufacturing same
SIEMENS AG2 citations63
US6222753B1Apr 24, 2001
SRAM cell arrangement and method for manufacturing same
SIEMENS AG4 citations62