Inventor
KIM YUDONG
US25 patents
⚠️ This page may combine multiple inventors who share the name “KIM YUDONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
7 patentsUS7135696B2Nov 14, 2006
Phase change memory with damascene memory element
INTEL CORP67 citations98
US6265292B1Jul 24, 2001
Method of fabrication of a novel flash integrated circuit
INTEL CORP81 citations93
US7259023B2Aug 21, 2007
Forming phase change memory arrays
INTEL CORP21 citations92
US10629652B2Apr 21, 2020
Dual-layer dielectric in memory device
INTEL CORP5 citations82
US9704923B1Jul 11, 2017
Dual-layer dielectric in memory device
INTEL CORP6 citations82
US7348618B2Mar 25, 2008
Flash memory cell having reduced floating gate to floating gate coupling
INTEL CORP10 citations82
US10134809B2Nov 20, 2018
Dual-layer dielectric in memory device
INTEL CORP3 citations70
KIM YUDONG
4 patentsUS8513576B2Aug 20, 2013
Dual resistance heater for phase change devices and manufacturing method thereof
KIM YUDONG13 citations91
US7880123B2Feb 1, 2011
Dual resistance heater for phase change devices and manufacturing method thereof
KIM YUDONG14 citations91
US8536013B2Sep 17, 2013
Forming phase change memory cells
KIM YUDONG8 citations83
US9203024B2Dec 1, 2015
Copper compatible chalcogenide phase change memory with adjustable threshold voltage
KIM YUDONG0 citations51
MICRON TECHNOLOGY INC
3 patentsUS8952299B2Feb 10, 2015
Dual resistance heater for phase change devices and manufacturing method thereof
MICRON TECHNOLOGY INC5 citations84
US10522757B2Dec 31, 2019
Dual resistive-material regions for phase change memory devices
MICRON TECHNOLOGY INC0 citations52
US10522756B2Dec 31, 2019
Dual resistance heater for phase change memory devices
MICRON TECHNOLOGY INC0 citations52
KUO CHARLES
3 patentsUS7374996B2May 20, 2008
Structured, electrically-formed floating gate for flash memories
KUO CHARLES12 citations83
US8222627B2Jul 17, 2012
Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element
KUO CHARLES2 citations61
US7847333B2Dec 7, 2010
Structured, electrically-formed floating gate for flash memories
KUO CHARLES4 citations61