Inventor

HUANG XIAOQIU

US5 patents

⚠️ This page may combine multiple inventors who share the name “HUANG XIAOQIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AUSTRIA AG

2 patents

US11545545B2Jan 3, 2023

Superjunction device with oxygen inserted Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62

US10790353B2Sep 29, 2020

Semiconductor device with superjunction and oxygen inserted Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51

FREESCALE SEMICONDUCTOR INC

2 patents

US7820519B2Oct 26, 2010

Process of forming an electronic device including a conductive structure extending through a buried insulating layer

FREESCALE SEMICONDUCTOR INC5 citations59

US7645651B2Jan 12, 2010

LDMOS with channel stress

FREESCALE SEMICONDUCTOR INC5 citations59

ROGGENBAUER TODD C

1 patent

US8188543B2May 29, 2012

Electronic device including a conductive structure extending through a buried insulating layer

ROGGENBAUER TODD C12 citations78