P

Inventor

LU WENPIN

TW18 patents
⚠️ This page may combine multiple inventors who share the name “LU WENPIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

17 patents
US6130452AOct 10, 2000

Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication

MACRONIX INT CO LTD45 citations96
US5912845AJun 15, 1999

Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage

MACRONIX INT CO LTD49 citations96
US5837584ANov 17, 1998

Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication

MACRONIX INT CO LTD46 citations96
US6363013B1Mar 26, 2002

Auto-stopped page soft-programming method with voltage limited component

MACRONIX INT CO LTD68 citations95
US7301818B2Nov 27, 2007

Hole annealing methods of non-volatile memory cells

MACRONIX INT CO LTD24 citations92
US6746968B1Jun 8, 2004

Method of reducing charge loss for nonvolatile memory

MACRONIX INT CO LTD32 citations92
US6031766AFeb 29, 2000

Method and circuit for substrate current induced hot e-injection (SCIHE) approach for VT convergence at low Vcc voltage

MACRONIX INT CO LTD34 citations92
US5963808AOct 5, 1999

Method of forming an asymmetric bird's beak cell for a flash EEPROM

MACRONIX INT CO LTD36 citations92
US6614687B2Sep 2, 2003

Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM

MACRONIX INT CO LTD24 citations91
US6166955ADec 26, 2000

Apparatus and method for programming of flash EPROM memory

MACRONIX INT CO LTD28 citations91
US6055190AApr 25, 2000

Device and method for suppressing bit line column leakage during erase verification of a memory cell

MACRONIX INT CO LTD42 citations89
US7889556B2Feb 15, 2011

Flash memory having insulating liners between source/drain lines and channels

MACRONIX INT CO LTD7 citations82
US6960506B2Nov 1, 2005

Method of fabricating a memory device having a self-aligned contact

MACRONIX INT CO LTD8 citations73
US7668010B2Feb 23, 2010

Flash memory having insulating liners between source/drain lines and channels

MACRONIX INT CO LTD7 citations72
US7199007B2Apr 3, 2007

Non-volatile memory device having a nitride barrier to reduce the fast erase effect

MACRONIX INT CO LTD4 citations62
US7971177B2Jun 28, 2011

Design tool for charge trapping memory using simulated programming operations

MACRONIX INT CO LTD0 citations52
US7400011B2Jul 15, 2008

Non-volatile memory device having a nitride barrier to reduce the fast erase effect

MACRONIX INT CO LTD0 citations51

KU SHAO HONG

1 patent