P

Inventor

LEE BYOUNGHOON

KR16 patents
⚠️ This page may combine multiple inventors who share the name “LEE BYOUNGHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

14 patents
US11296078B2Apr 5, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11387236B2Jul 12, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations71
US11145738B2Oct 12, 2021

Semiconductor devices having multiple barrier patterns

SAMSUNG ELECTRONICS CO LTD3 citations71
US12080712B2Sep 3, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11948994B2Apr 2, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11217677B2Jan 4, 2022

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12062661B2Aug 13, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US12550333B2Feb 10, 2026

Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11778835B2Oct 3, 2023

Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11610975B2Mar 21, 2023

Semiconductor devices having multiple barrier patterns

SAMSUNG ELECTRONICS CO LTD0 citations60
US11335701B2May 17, 2022

Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11333979B2May 17, 2022

Methods of forming a pattern and methods of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10950709B2Mar 16, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12100736B2Sep 24, 2024

Semiconductor device having channel layers spaced apart in vertical direction

SAMSUNG ELECTRONICS CO LTD0 citations41

TOKYO ELECTRON LTD

1 patent

SEOUL NAT UNIV R&DB FOUNDATION

1 patent