Inventor
CHOU PAO-HWA
JP27 patents
⚠️ This page may combine multiple inventors who share the name “CHOU PAO-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
16 patentsUS7758920B2Jul 20, 2010
Method and apparatus for forming silicon-containing insulating film
TOKYO ELECTRON LTD81 citations98
US7507676B2Mar 24, 2009
Film formation method and apparatus for semiconductor process
TOKYO ELECTRON LTD79 citations98
US7462571B2Dec 9, 2008
Film formation method and apparatus for semiconductor process for forming a silicon nitride film
TOKYO ELECTRON LTD91 citations98
US7351668B2Apr 1, 2008
Film formation method and apparatus for semiconductor process
TOKYO ELECTRON LTD96 citations98
US7300885B2Nov 27, 2007
Film formation apparatus and method for semiconductor process
TOKYO ELECTRON LTD91 citations98
US8034673B2Oct 11, 2011
Film formation method and apparatus for forming silicon-containing insulating film doped with metal
TOKYO ELECTRON LTD74 citations97
US7964241B2Jun 21, 2011
Film formation method and apparatus for semiconductor process
TOKYO ELECTRON LTD75 citations95
US7989354B2Aug 2, 2011
Patterning method
TOKYO ELECTRON LTD9 citations84
US8343594B2Jan 1, 2013
Film formation method and apparatus for semiconductor process
TOKYO ELECTRON LTD8 citations83
US8383522B2Feb 26, 2013
Micro pattern forming method
TOKYO ELECTRON LTD2 citations63
US8025931B2Sep 27, 2011
Film formation apparatus for semiconductor process and method for using the same
TOKYO ELECTRON LTD5 citations63
US7754622B2Jul 13, 2010
Patterning method utilizing SiBN and photolithography
TOKYO ELECTRON LTD2 citations63
US7718497B2May 18, 2010
Method for manufacturing semiconductor device
TOKYO ELECTRON LTD3 citations63
US9460913B2Oct 4, 2016
Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
TOKYO ELECTRON LTD0 citations52
US7959733B2Jun 14, 2011
Film formation apparatus and method for semiconductor process
TOKYO ELECTRON LTD1 citations52
US9466476B2Oct 11, 2016
Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
TOKYO ELECTRON LTD0 citations42