Inventor

HWANG CHEOL SEONG

KR32 patents

⚠️ This page may combine multiple inventors who share the name “HWANG CHEOL SEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HWANG CHEOL SEONG

SAMSUNG ELECTRONICS CO LTD

Method for manufacturing a capacitor of semiconductor device having diffusion-blocking films

Methods of forming floating-gate FFRAM devices

Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof

Method of fabricating capacitor structures for inclusion within semiconductor devices

Capacitor utilizing high dielectric constant material

Methods of forming integrated circuit capacitors using metal reflow techniques

Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes

Ferroelectric structure including MgTiO3 passivation

Capacitor and manufacturing method thereof

Semiconductor device including capacitor and method of forming the same

Semiconductor device including capacitor and method of forming the same

Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the same

Semiconductor device including capacitor and method of forming the same

Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the same

SEOUL NAT UNIV R&DB FOUNDATION

Non-volatile ferroelectric memory device and method of driving the same

Semiconductor memory device and method of fabricating the same

Crossbar array device applicable to graph data analysis, nueromorphic device including the same, operation method of crossbar array device and graph data analysis method using crossbar array device

Vertically stacked memory device and manufacturing method thereof

Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

Variable resistor, non-volatile memory device using the same, and method of fabricating thereof

SAMSUNG ELECTRO MECH

Thin film multi-layered ceramic capacitor and method of manufacturing the same

Printed circuit board with embedded capacitors therein and manufacturing process thereof

Printed circuit board with embedded capacitors therein and manufacturing process thereof

HWANG CHEOL SEONG

Vertical nonvolatile memory device including a selective diode

3-dimensional (3D) non-volatile memory device and method of fabricating the same

SK HYNIX INC

Resistive memory device and method of fabricating the same

Resistive memory device and method of fabricating the same

AIR PROD & CHEM

Method of making a multicomponent film

UNIV SEOUL NAT R & DB FOUND

3-dimensional (3D) non-volatile memory device and method of fabricating the same

SEOUL NAT UNIV IND FOUNDATION

Dielectric film, method of manufacturing the same, and semiconductor capacitor having the dielectric film

SNU R&DB FOUNDATION

Resistance memory element, phase change memory element, resistance random access memory device, information reading method thereof, phase change random access memory device, and information reading method thereof

HYNIX SEMICONDUCTOR INC

Phase change memory device with reinforced adhesion force