Inventor
SHIMA MASASHI
JP49 patents
⚠️ This page may combine multiple inventors who share the name “SHIMA MASASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHIMA MASASHI
18 patentsUS8106467B2Jan 31, 2012
Semiconductor device having carrier mobility raised by generating strain in channel region
SHIMA MASASHI10 citations84
US8080845B2Dec 20, 2011
Semiconductor device
SHIMA MASASHI7 citations84
US8072031B2Dec 6, 2011
P-channel MOS transistor and semiconductor integrated circuit device
SHIMA MASASHI6 citations74
US8987106B2Mar 24, 2015
Semiconductor device manufacturing method
SHIMA MASASHI2 citations63
US8603874B2Dec 10, 2013
Method of manufacturing semiconductor device
SHIMA MASASHI2 citations63
US8552511B2Oct 8, 2013
Semiconductor device and manufacturing method thereof
SHIMA MASASHI3 citations63
US8067291B2Nov 29, 2011
MOS field-effect transistor and manufacturing method thereof
SHIMA MASASHI2 citations63
US8841725B2Sep 23, 2014
Semiconductor device having channel dose region and method for manufacturing semiconductor device
SHIMA MASASHI0 citations52
US8686501B2Apr 1, 2014
Semiconductor device with high voltage transistor
SHIMA MASASHI0 citations52
US8497178B2Jul 30, 2013
Semiconductor device and method for making the same
SHIMA MASASHI0 citations52
US8329528B2Dec 11, 2012
Semiconductor device and method of manufacturing semiconductor device
SHIMA MASASHI0 citations52
US8222701B2Jul 17, 2012
P-channel MOS transistor and semiconductor integrated circuit device
SHIMA MASASHI1 citations52
US8188553B2May 29, 2012
Semiconductor device and method for making the same
SHIMA MASASHI0 citations52
US8158498B2Apr 17, 2012
P-channel MOS transistor and fabrication process thereof
SHIMA MASASHI0 citations52
US8143675B2Mar 27, 2012
Semiconductor device and method of manufacturing semiconductor device
SHIMA MASASHI0 citations52
US8410550B2Apr 2, 2013
Breakdown voltage MOS semiconductor device
SHIMA MASASHI0 citations51
US8697531B2Apr 15, 2014
Method for fabricating a semiconductor device having stress/strain and protrusion
SHIMA MASASHI0 citations42
US8735945B2May 27, 2014
Semiconductor device
SHIMA MASASHI0 citations41
FUJITSU SEMICONDUCTOR LTD
13 patentsUS9112027B2Aug 18, 2015
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD9 citations92
US8853673B2Oct 7, 2014
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD15 citations92
US7791064B2Sep 7, 2010
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD18 citations92
US8633075B2Jan 21, 2014
Semiconductor device with high voltage transistor
FUJITSU SEMICONDUCTOR LTD9 citations84
US7816766B2Oct 19, 2010
Semiconductor device with compressive and tensile stresses
FUJITSU SEMICONDUCTOR LTD16 citations84
US8362522B2Jan 29, 2013
Semiconductor device and method for manufacturing the same
FUJITSU SEMICONDUCTOR LTD3 citations63
US8049251B2Nov 1, 2011
Semiconductor device and method for manufacturing the same
FUJITSU SEMICONDUCTOR LTD3 citations63
US9123742B2Sep 1, 2015
Semiconductor device and method for manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations52
US8846478B2Sep 30, 2014
Manufacturing method of semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations52
US8741724B2Jun 3, 2014
Method of manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations52
US8674437B2Mar 18, 2014
Semiconductor device and method for manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD1 citations52
US8735254B2May 27, 2014
Manufacture method of a high voltage MOS semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations51
US7994586B2Aug 9, 2011
Semiconductor device and manufacturing method of the same
FUJITSU SEMICONDUCTOR LTD0 citations42
FUJITSU LTD
11 patentsUS7378305B2May 27, 2008
Semiconductor integrated circuit and fabrication process thereof
FUJITSU LTD27 citations92
US7202120B2Apr 10, 2007
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU LTD23 citations92
US6380604B1Apr 30, 2002
Quantum semiconductor device having quantum dots and optical detectors using the same
FUJITSU LTD20 citations92
US7262465B2Aug 28, 2007
P-channel MOS transistor and fabrication process thereof
FUJITSU LTD13 citations84
US7435656B2Oct 14, 2008
Semiconductor device of transistor structure having strained semiconductor layer
FUJITSU LTD6 citations74
US6777728B2Aug 17, 2004
Semiconductor device and complementary semiconductor device
FUJITSU LTD10 citations73
US7030465B2Apr 18, 2006
Semiconductor device that can increase the carrier mobility and method for fabricating the same
FUJITSU LTD6 citations63
US5591994AJan 7, 1997
Compound semiconductor field effect transistor having a controlled diffusion profile of impurity elements
FUJITSU LTD4 citations63
US7456473B2Nov 25, 2008
MOS field effect transistor and manufacture method thereof
FUJITSU LTD0 citations52
US6930374B2Aug 16, 2005
Semiconductor device of transistor structure having strained semiconductor layer
FUJITSU LTD0 citations52
US6459120B1Oct 1, 2002
Semiconductor device and manufacturing method of the same
FUJITSU LTD1 citations52
FUJITSU MICROELECTRONICS LTD
3 patentsUS7667227B2Feb 23, 2010
Semiconductor device and fabrication method thereof
FUJITSU MICROELECTRONICS LTD77 citations99
US7518188B2Apr 14, 2009
P-channel MOS transistor and fabrication process thereof
FUJITSU MICROELECTRONICS LTD10 citations84
US7476941B2Jan 13, 2009
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD2 citations63