Inventor

CHIU HAN-CHIN

TW53 patents

⚠️ This page may combine multiple inventors who share the name “CHIU HAN-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHIU HAN-CHIN

TAIWAN SEMICONDUCTOR MFG CO LTD

Sidewall passivation for HEMT devices

Sidewall passivation for HEMT devices

Semiconductor device and method of forming the same

Surface treatment and passivation for high electron mobility transistors

Structure for a gallium nitride (GaN) high electron mobility transistor

High electron mobility transistor and method of forming the same

Sidewall passivation for HEMT devices

HEMT-compatible lateral rectifier structure

Sidewall passivation for HEMT devices

HEMT-compatible lateral rectifier structure

High electron mobility transistor and method of forming the same

High electron mobility transistor and method of forming the same

Sidewall passivation for HEMT devices

MIM device with laminated dielectric layers

High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer

Low damage passivation layer for III-V based devices

Surface treatment and passivation for high electron mobility transistors

Surface treatment and passivation for high electron mobility transistors

Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric

Method of implanting dopants into a group III-nitride structure and device formed

HEMT-compatible lateral rectifier structure

Method of implanting dopants into a group III-nitride structure and device formed

HEMT-compatible lateral rectifier structure

Method of implanting dopants into a group III-nitride structure and device formed

Crystalline layer for passivation of III-N surface

Surface treatment and passivation for high electron mobility transistors

Surface treatment and passivation for high electron mobility transistors

Method of implanting dopants into a group III-nitride structure and device formed

High electron mobility transistor and method of forming the same

Sidewall passivation for HEMT devices

Normally-off enhancement-mode MISFET

High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof

INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD

Semiconductor device structure

Semiconductor device and fabrication method thereof

Semiconductor device structures and methods of manufacturing the same

Semiconductor apparatus and fabrication method thereof

Semiconductor apparatus and fabrication method thereof

Semiconductor devices and methods of manufacturing the same

High electron mobility transistor and fabrication method thereof

INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG

High electron mobility transistor and method of forming the same

Method of forming a high electron mobility transistor

High electron mobility transistor and method of forming the same

High electron mobility transistor and method of forming the same

CHIANG CHEN-HAO

High electron mobility transistor and method of forming the same

CHEN CHI-MING

Diffusion barrier layer for group III nitride on silicon substrate