Inventor
Liu sheng-de
TW16 patents
⚠️ This page may combine multiple inventors who share the name “Liu sheng-de”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS9601608B2Mar 21, 2017
Structure for a gallium nitride (GaN) high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9941398B2Apr 10, 2018
High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9911734B2Mar 6, 2018
Semiconductor device containing HEMT and MISFET and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11233145B2Jan 25, 2022
Manufacturing method of semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10622471B2Apr 14, 2020
Manufacturing method of semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10325910B2Jun 18, 2019
Semiconductor device containing HEMT and MISFET and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141438B2Nov 27, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9748373B2Aug 29, 2017
MISFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9530685B2Dec 27, 2016
Isolation trench through backside of substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9418901B2Aug 16, 2016
Semiconductor device containing HEMT and MISFET and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269948B2Apr 23, 2019
High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
4 patentsUS8928120B1Jan 6, 2015
Wafer edge protection structure
TAIWAN SEMICONDUCTOR MFG8 citations84
US9263569B2Feb 16, 2016
MISFET device and method of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US8912573B2Dec 16, 2014
Semiconductor device containing HEMT and MISFET and method of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9142614B2Sep 22, 2015
Isolation trench through backside of substrate
TAIWAN SEMICONDUCTOR MFG1 citations48