Inventor
KAR ROY ARJUN
US23 patents
⚠️ This page may combine multiple inventors who share the name “KAR ROY ARJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEWPORT FAB LLC
17 patentsUS6680521B1Jan 20, 2004
High density composite MIM capacitor with reduced voltage dependence in semiconductor dies
NEWPORT FAB LLC46 citations96
US6777777B1Aug 17, 2004
High density composite MIM capacitor with flexible routing in semiconductor dies
NEWPORT FAB LLC54 citations95
US7589009B1Sep 15, 2009
Method for fabricating a top conductive layer in a semiconductor die and related structure
NEWPORT FAB LLC21 citations92
US7041569B1May 9, 2006
Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor dies
NEWPORT FAB LLC22 citations92
US6430028B1Aug 6, 2002
Method for fabrication of an MIM capacitor and related structure
NEWPORT FAB LLC38 citations92
US7078310B1Jul 18, 2006
Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies
NEWPORT FAB LLC18 citations91
US9887123B2Feb 6, 2018
Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
NEWPORT FAB LLC5 citations84
US7897484B2Mar 1, 2011
Fabricating a top conductive layer in a semiconductor die
NEWPORT FAB LLC9 citations84
US7704874B1Apr 27, 2010
Method for fabricating a frontside through-wafer via in a processed wafer and related structure
NEWPORT FAB LLC9 citations84
US7772673B1Aug 10, 2010
Deep trench isolation and method for forming same
NEWPORT FAB LLC12 citations83
US10615071B2Apr 7, 2020
Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
NEWPORT FAB LLC1 citations73
US6943414B2Sep 13, 2005
Method for fabricating a metal resistor in an IC chip and related structure
NEWPORT FAB LLC7 citations73
US7052966B2May 30, 2006
Deep N wells in triple well structures and method for fabricating same
NEWPORT FAB LLC6 citations71
US9105681B2Aug 11, 2015
Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolation
NEWPORT FAB LLC2 citations60
US10615072B2Apr 7, 2020
Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
NEWPORT FAB LLC0 citations52
US9458011B2Oct 4, 2016
Scalable self-supported MEMS structure and related method
NEWPORT FAB LLC1 citations51
US9377350B2Jun 28, 2016
Light sensor with chemically resistant and robust reflector stack
NEWPORT FAB LLC0 citations51
KAR-ROY ARJUN
3 patentsUS8212331B1Jul 3, 2012
Method for fabricating a backside through-wafer via in a processed wafer and related structure
KAR-ROY ARJUN8 citations83
US8098351B2Jan 17, 2012
Self-planarized passivation dielectric for liquid crystal on silicon structure and related method
KAR-ROY ARJUN7 citations82
US9136157B1Sep 15, 2015
Deep N wells in triple well structures
KAR-ROY ARJUN3 citations59