Inventor
CHU HANYOU
US34 patents
⚠️ This page may combine multiple inventors who share the name “CHU HANYOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
THERMA WAVE INC
13 patentsUS6919964B2Jul 19, 2005
CD metrology analysis using a finite difference method
THERMA WAVE INC162 citations99
US6704661B1Mar 9, 2004
Real time analysis of periodic structures on semiconductors
THERMA WAVE INC215 citations99
US6778911B2Aug 17, 2004
Real time analysis of periodic structures on semiconductors
THERMA WAVE INC82 citations98
US7038850B2May 2, 2006
CD metrology analysis using green's function
THERMA WAVE INC67 citations97
US6867866B1Mar 15, 2005
CD metrology analysis using green's function
THERMA WAVE INC54 citations95
US7031848B2Apr 18, 2006
Real time analysis of periodic structures on semiconductors
THERMA WAVE INC18 citations93
US6947850B2Sep 20, 2005
Real time analysis of periodic structures on semiconductors
THERMA WAVE INC17 citations93
US6931361B2Aug 16, 2005
Real time analysis of periodic structures on semiconductors
THERMA WAVE INC15 citations93
US7145664B2Dec 5, 2006
Global shape definition method for scatterometry
THERMA WAVE INC20 citations91
US7233390B2Jun 19, 2007
Scatterometry for samples with non-uniform edges
THERMA WAVE INC10 citations83
US7106459B2Sep 12, 2006
CD metrology analysis using a finite difference method
THERMA WAVE INC9 citations74
US6856385B2Feb 15, 2005
Spatial averaging technique for ellipsometry and reflectometry
THERMA WAVE INC4 citations74
US6577384B2Jun 10, 2003
Spatial averaging technique for ellipsometry and reflectometry
THERMA WAVE INC9 citations74
TOKYO ELECTRON LTD
13 patentsUS7394535B1Jul 1, 2008
Optical metrology using a photonic nanojet
TOKYO ELECTRON LTD37 citations93
US7327475B1Feb 5, 2008
Measuring a process parameter of a semiconductor fabrication process using optical metrology
TOKYO ELECTRON LTD19 citations92
US7636649B2Dec 22, 2009
Automated process control of a fabrication tool using a dispersion function relating process parameter to dispersion
TOKYO ELECTRON LTD16 citations84
US10978278B2Apr 13, 2021
Normal-incident in-situ process monitor sensor
TOKYO ELECTRON LTD2 citations73
US9970818B2May 15, 2018
Spatially resolved optical emission spectroscopy (OES) in plasma processing
TOKYO ELECTRON LTD5 citations72
US9059038B2Jun 16, 2015
System for in-situ film stack measurement during etching and etch control method
TOKYO ELECTRON LTD5 citations71
US7912679B2Mar 22, 2011
Determining profile parameters of a structure formed on a semiconductor wafer using a dispersion function relating process parameter to dispersion
TOKYO ELECTRON LTD5 citations63
US7639351B2Dec 29, 2009
Automated process control using optical metrology with a photonic nanojet
TOKYO ELECTRON LTD4 citations63
US7522294B2Apr 21, 2009
Measuring a process parameter of a semiconductor fabrication process using optical metrology
TOKYO ELECTRON LTD5 citations63
US12261030B2Mar 25, 2025
Normal-incidence in-situ process monitor sensor
TOKYO ELECTRON LTD0 citations62
US11961721B2Apr 16, 2024
Normal-incidence in-situ process monitor sensor
TOKYO ELECTRON LTD0 citations62
US10837902B2Nov 17, 2020
Optical sensor for phase determination
TOKYO ELECTRON LTD1 citations59
US7639375B2Dec 29, 2009
Determining transmittance of a photomask using optical metrology
TOKYO ELECTRON LTD0 citations38
CHU HANYOU
3 patentsUS8560270B2Oct 15, 2013
Rational approximation and continued-fraction approximation approaches for computation efficiency of diffraction signals
CHU HANYOU3 citations61
US8762100B1Jun 24, 2014
Numerical aperture integration for optical critical dimension (OCD) metrology
CHU HANYOU2 citations60
US8670948B2Mar 11, 2014
Numerical aperture integration for optical critical dimension (OCD) metrology
CHU HANYOU2 citations59