P

Inventor

HARADA SHIGERU

JP67 patents
⚠️ This page may combine multiple inventors who share the name “HARADA SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

35 patents
US5202579AApr 13, 1993

Semiconductor device having multilayer interconnection structure

MITSUBISHI ELECTRIC CORP149 citations99
US6417575B2Jul 9, 2002

Semiconductor device and fabrication process therefor

MITSUBISHI ELECTRIC CORP125 citations97
US5604380AFeb 18, 1997

Semiconductor device having a multilayer interconnection structure

MITSUBISHI ELECTRIC CORP120 citations97
US6476491B2Nov 5, 2002

Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion and method for fabricating the same

MITSUBISHI ELECTRIC CORP75 citations96
US5565378AOct 15, 1996

Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution

MITSUBISHI ELECTRIC CORP66 citations96
US5341026AAug 23, 1994

Semiconductor device having a titanium and a titanium compound multilayer interconnection structure

MITSUBISHI ELECTRIC CORP110 citations96
US5312775AMay 17, 1994

Method of manufacturing semiconductor device having multilayer interconnection structure

MITSUBISHI ELECTRIC CORP69 citations96
US5313101AMay 17, 1994

Interconnection structure of semiconductor integrated circuit device

MITSUBISHI ELECTRIC CORP63 citations96
US5260600ANov 9, 1993

Semiconductor device having protective insulating film

MITSUBISHI ELECTRIC CORP50 citations96
US4867859ASep 19, 1989

Apparatus for forming a thin film

MITSUBISHI ELECTRIC CORP89 citations96
US5525546AJun 11, 1996

Semiconductor device and method of manufacturing thereof

MITSUBISHI ELECTRIC CORP59 citations94
US5430329AJul 4, 1995

Semiconductor device with bonding pad electrode

MITSUBISHI ELECTRIC CORP78 citations94
US4913090AApr 3, 1990

Chemical vapor deposition apparatus having cooling heads adjacent to gas dispersing heads in a single chamber

MITSUBISHI ELECTRIC CORP77 citations94
US4962727AOct 16, 1990

Thin film-forming apparatus

MITSUBISHI ELECTRIC CORP35 citations93
US6448658B2Sep 10, 2002

Semiconductor device having improved interconnection-wiring structures

MITSUBISHI ELECTRIC CORP41 citations92
US6339257B1Jan 15, 2002

Semiconductor device

MITSUBISHI ELECTRIC CORP38 citations92
US6283835B1Sep 4, 2001

Method and apparatus for manufacturing a semiconductor integrated circuit

MITSUBISHI ELECTRIC CORP19 citations92
US5728630AMar 17, 1998

Method of making a semiconductor device

MITSUBISHI ELECTRIC CORP23 citations92
US5510653AApr 23, 1996

Semiconductor device including silicon ladder resin layer

MITSUBISHI ELECTRIC CORP38 citations92
US5488014AJan 30, 1996

Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor

MITSUBISHI ELECTRIC CORP20 citations92
US5270253ADec 14, 1993

Method of producing semiconductor device

MITSUBISHI ELECTRIC CORP35 citations92
US4922321AMay 1, 1990

Semiconductor device and a method of producing same

MITSUBISHI ELECTRIC CORP41 citations92
US5480836AJan 2, 1996

Method of forming an interconnection structure

MITSUBISHI ELECTRIC CORP34 citations91
US5481137AJan 2, 1996

Semiconductor device with improved immunity to contact and conductor defects

MITSUBISHI ELECTRIC CORP20 citations91
US5306947AApr 26, 1994

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP32 citations90
US6130481AOct 10, 2000

Semiconductor integrated circuit interconnection structures and method of making the interconnection structures

MITSUBISHI ELECTRIC CORP39 citations89
US5712509AJan 27, 1998

Semiconductor integrated circuit interconnection structures

MITSUBISHI ELECTRIC CORP40 citations89
US5889330AMar 30, 1999

Semiconductor device whose flattening resin film component has a controlled carbon atom content

MITSUBISHI ELECTRIC CORP18 citations83
US5362686ANov 8, 1994

Manufacturing method for protective silicon oxynitride film

MITSUBISHI ELECTRIC CORP15 citations82
US6178972B1Jan 30, 2001

Method and apparatus for manufacturing a semiconductor integrated circuit

MITSUBISHI ELECTRIC CORP8 citations74
US4983547AJan 8, 1991

Method of forming a silicide film

MITSUBISHI ELECTRIC CORP10 citations73
US4942451AJul 17, 1990

Semiconductor device having improved antireflection coating

MITSUBISHI ELECTRIC CORP16 citations73
US4896204AJan 23, 1990

Semiconductor device and method of manufacturing thereof

MITSUBISHI ELECTRIC CORP13 citations73
US6046488AApr 4, 2000

Semiconductor device having conductive layer and manufacturing method thereof

MITSUBISHI ELECTRIC CORP13 citations72
US5260604ANov 9, 1993

Semiconductor device with improved immunity to contact and conductor defects

MITSUBISHI ELECTRIC CORP6 citations72

SONY CORP

6 patents

MITSUTA SHINJI

5 patents

KOMATSU MFG CO LTD

2 patents

RENESAS TECH CORP

1 patent

TOSHIBA KK

1 patent

Showing the top 50 of 67 patents by PatentIndex Score.