Inventor

TANG XUETI

US46 patents

⚠️ This page may combine multiple inventors who share the name “TANG XUETI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TANG XUETI

SAMSUNG ELECTRONICS CO LTD

Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions

Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories

Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions

Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications

Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

Semiconductor device and method of making the same

Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers

Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque

B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM

Method and system for providing magnetic junctions using thermally assisted spin transfer torque switching

Method and system for providing a magnetic junction having a low damping hybrid free layer

Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications

Hybrid oxide/metal cap layer for boron-free free layer

Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications

Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Oxide interlayers containing glass-forming agents

Method and system for providing magnetic junctions utilizing metal oxide layer(s)

Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)

Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layer

Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer

Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications

Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer

Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer

Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer

Method for providing a magnetic junction on a substrate and usable in a magnetic device

Method and system for providing magnetic junctions including free layers that are cobalt-free

Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions

APALKOV DMYTRO

Method and system for providing a magnetic junction using half metallic ferromagnets

Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy

Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories

Method and system for providing multiple logic cells in a single stack

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

Method and system for setting a pinned layer in a magnetic tunneling junction

Method and system for providing a magnetic junction configured for precessional switching using a bias structure

TANG XUETI

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

Method and system for providing inverted dual magnetic tunneling junction elements

Method and system for providing magnetic junctions having improved characteristics

WATTS STEVEN M

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

CHEN EUGENE YOUJUN

Magnetic tunneling junction seed, capping, and spacer layer materials

LOTTIS DANIEL

Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements

KROUNBI MOHAMAD TOWFIK

Method and system for providing a magnetic tunneling junction using thermally assisted switching

ONG ADRIAN E

Method and system for providing a magnetic field aligned spin transfer torque random access memory

MOON KISEOK

Method and system for providing a magnetic junction having an engineered barrier layer