Inventor
LIN HAO-HSIUNG
TW22 patents
⚠️ This page may combine multiple inventors who share the name “LIN HAO-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS9773889B2Sep 26, 2017
Method of semiconductor arrangement formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9711607B1Jul 18, 2017
One-dimensional nanostructure growth on graphene and devices thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10832957B2Nov 10, 2020
Method for direct forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10516050B2Dec 24, 2019
Method for forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10263097B2Apr 16, 2019
Method of semiconductor arrangement formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11715770B2Aug 1, 2023
Forming semiconductor structures with semimetal features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626320B2Apr 11, 2023
Method for manufacturing semiconductor device, method for packaging semiconductor chip, method for manufacturing shallow trench isolation (STI)
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11538938B2Dec 27, 2022
Method for forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177368B2Nov 16, 2021
Semiconductor arrangement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11164972B2Nov 2, 2021
Method for forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11152251B2Oct 19, 2021
Method for manufacturing semiconductor device having via formed by ion beam
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957602B2Mar 23, 2021
Method for direct forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605674B2Mar 14, 2023
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11024674B2Jun 1, 2021
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10854724B2Dec 1, 2020
One-dimensional nanostructure growth on graphene and devices thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510611B2Dec 17, 2019
Method for direct forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10347538B2Jul 9, 2019
Method for direct forming stressor, semiconductor device having stressor, and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134865B2Nov 20, 2018
One-dimensional nanostructure growth on graphene and devices thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504999B2Dec 10, 2019
Forming semiconductor structures with semimetal features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10515998B2Dec 24, 2019
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49