Inventor
RIEGLER ANDREAS
AT42 patents
⚠️ This page may combine multiple inventors who share the name “RIEGLER ANDREAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
18 patentsUS11323099B2May 3, 2022
Electronic circuit with a transistor device and a biasing circuit
INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US10811529B2Oct 20, 2020
Transistor device with gate resistor
INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
US12166483B2Dec 10, 2024
Electronic circuit with a transistor device and a biasing circuit
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12014973B2Jun 18, 2024
Multi-die-package and method
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11728790B2Aug 15, 2023
Electronic circuit having a transistor device and a biasing circuit
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11088275B2Aug 10, 2021
Method for operating a superjunction transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081430B2Aug 3, 2021
Multi-die-package and method
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10411126B2Sep 10, 2019
Semiconductor device having a first through contact structure in ohmic contact with the gate electrode
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10374032B2Aug 6, 2019
Field-effect semiconductor device having N and P-doped pillar regions
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11545561B2Jan 3, 2023
Methods for manufacturing a MOSFET
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US10903341B2Jan 26, 2021
Methods for manufacturing a MOSFET
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US12424501B2Sep 23, 2025
Semiconductor package including a chip-substrate composite semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12550387B2Feb 10, 2026
Trench junction field effect transistor having a mesa region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US12490485B2Dec 2, 2025
Superjunction transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US12349401B2Jul 1, 2025
Semiconductor device including a trench structure having a trench dielectric structure with a gap
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US11289597B2Mar 29, 2022
Superjunction transistor device with soft switching behavior
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10347491B2Jul 9, 2019
Forming recombination centers in a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations48
US12368052B2Jul 22, 2025
Chip-substrate composite semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations47
TMC CORP
7 patentsUS4955633ASep 11, 1990
Adjusting device for a ski binding
TMC CORP45 citations92
US4867471ASep 19, 1989
Safety binding
TMC CORP8 citations74
US4973072ANov 27, 1990
Ski brake
TMC CORP13 citations73
US4878687ANov 7, 1989
Skibremse
TMC CORP11 citations73
US4861064AAug 29, 1989
Ski safety binding
TMC CORP4 citations61
US4896896AJan 30, 1990
Safety ski binding
TMC CORP2 citations59
US4813700AMar 21, 1989
Ski binding screw connection
TMC CORP4 citations59
INFINEON TECHNOLOGIES AG
7 patentsUS11978693B2May 7, 2024
Semiconductor device package comprising side walls connected with contact pads of a semiconductor die
INFINEON TECHNOLOGIES AG2 citations71
US9793184B2Oct 17, 2017
Sensor for a semiconductor device
INFINEON TECHNOLOGIES AG2 citations71
US11527468B2Dec 13, 2022
Semiconductor oxide or glass based connection body with wiring structure
INFINEON TECHNOLOGIES AG0 citations62
US9741835B2Aug 22, 2017
Semiconductor device and insulated gate bipolar transistor with transistor cells and sensor cell
INFINEON TECHNOLOGIES AG0 citations52
US10431471B2Oct 1, 2019
Method of planarizing a semiconductor wafer and semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US10361096B2Jul 23, 2019
Semiconductor component, method for processing a substrate and method for producing a semiconductor component
INFINEON TECHNOLOGIES AG0 citations50
US10199291B2Feb 5, 2019
Sensor for a semiconductor device
INFINEON TECHNOLOGIES AG0 citations50