Inventor
FINNEY ADRIAN
AT24 patents
⚠️ This page may combine multiple inventors who share the name “FINNEY ADRIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS9070765B2Jun 30, 2015
Semiconductor device with low on resistance and high breakdown voltage
INFINEON TECHNOLOGIES AG5 citations72
US9159719B2Oct 13, 2015
ESD protection
INFINEON TECHNOLOGIES AG4 citations69
US9344078B1May 17, 2016
Inverse current protection circuit sensed with vertical source follower
INFINEON TECHNOLOGIES AG2 citations61
US12021139B2Jun 25, 2024
Semiconductor arrangement with an integrated temperature sensor
INFINEON TECHNOLOGIES AG0 citations59
US10931272B2Feb 23, 2021
Transistor arrangement with a load transistor and a sense transistor
INFINEON TECHNOLOGIES AG0 citations49
US10199490B2Feb 5, 2019
Semiconductor device with a guard structure and corresponding methods of manufacture
INFINEON TECHNOLOGIES AG0 citations47
US9941402B2Apr 10, 2018
Semiconductor devices and methods for forming a semiconductor device
INFINEON TECHNOLOGIES AG1 citations47
US9406754B2Aug 2, 2016
Smart semiconductor switch
INFINEON TECHNOLOGIES AG0 citations44
US9590091B2Mar 7, 2017
Minority carrier conversion structure
INFINEON TECHNOLOGIES AG0 citations40
US9406755B2Aug 2, 2016
Smart semiconductor switch
INFINEON TECHNOLOGIES AG0 citations31
ZETEX PLC
6 patentsUS6802719B2Oct 12, 2004
Implantation method
ZETEX PLC32 citations92
US6940145B2Sep 6, 2005
Termination structure for a semiconductor device
ZETEX PLC27 citations83
US7102416B2Sep 5, 2006
High side switching circuit
ZETEX PLC8 citations73
US7301745B2Nov 27, 2007
Temperature dependent switching circuit
ZETEX PLC5 citations62
US7279880B2Oct 9, 2007
Temperature independent low voltage reference circuit
ZETEX PLC4 citations62
US6778366B2Aug 17, 2004
Current limiting protection circuit
ZETEX PLC4 citations62
INFINEON TECHNOLOGIES AUSTRIA AG
4 patentsUS12414349B2Sep 9, 2025
Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US12191385B2Jan 7, 2025
Semiconductor device having a current spreading region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US12557333B2Feb 17, 2026
Semiconductor power device and method of manufacturing the same
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US12431886B2Sep 30, 2025
Electronic circuit with a transistor device and a clamp circuit and method
INFINEON TECHNOLOGIES AUSTRIA AG0 citations47