Inventor
BANERJEE SANJAY
US20 patents
⚠️ This page may combine multiple inventors who share the name “BANERJEE SANJAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
12 patentsUS5548132AAug 20, 1996
Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
MICRON TECHNOLOGY INC32 citations96
US6320202B1Nov 20, 2001
Bottom-gated thin film transistors comprising germanium in a channel region
MICRON TECHNOLOGY INC19 citations92
US5977560ANov 2, 1999
Thin film transistor constructions with polycrystalline silicon-germanium alloy doped with carbon in the channel region
MICRON TECHNOLOGY INC29 citations92
US5665981ASep 9, 1997
Thin film transistors and method of promoting large crystal grain size in the formation of polycrystalline silicon alloy thin films
MICRON TECHNOLOGY INC17 citations82
US6200839B1Mar 13, 2001
Methods of forming thin film transistors
MICRON TECHNOLOGY INC14 citations81
US6214652B1Apr 10, 2001
Thin film transistors and method of forming thin film transistors
MICRON TECHNOLOGY INC4 citations74
US6017782AJan 25, 2000
Thin film transistor and method of forming thin film transistors
MICRON TECHNOLOGY INC6 citations74
US5936262AAug 10, 1999
Thin film transistors
MICRON TECHNOLOGY INC5 citations74
US5904513AMay 18, 1999
Method of forming thin film transistors
MICRON TECHNOLOGY INC5 citations74
US6166398ADec 26, 2000
Thin film transistors
MICRON TECHNOLOGY INC5 citations72
US6420219B2Jul 16, 2002
Thin film transistors and method of forming thin film transistors
MICRON TECHNOLOGY INC2 citations63
US5953596ASep 14, 1999
Methods of forming thin film transistors
MICRON TECHNOLOGY INC0 citations51
UNIV TEXAS
3 patentsUS11881435B2Jan 23, 2024
Catalyst influenced chemical etching for fabricating three-dimensional SRAM architectures
UNIV TEXAS2 citations72
US11355397B2Jun 7, 2022
Catalyst influenced chemical etching for fabricating three-dimensional SRAM architectures
UNIV TEXAS2 citations72
US8008649B2Aug 30, 2011
Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state current leakage, supply voltage and power consumption
UNIV TEXAS5 citations60