Inventor
WEI HOUNG-CHI
CN21 patents
⚠️ This page may combine multiple inventors who share the name “WEI HOUNG-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOSEL VITELIC INC
9 patentsUS6271079B1Aug 7, 2001
Method of forming a trench capacitor
MOSEL VITELIC INC35 citations92
US6025245AFeb 15, 2000
Method of forming a trench capacitor with a sacrificial silicon nitrate sidewall
MOSEL VITELIC INC30 citations92
US6613672B1Sep 2, 2003
Apparatus and process of fabricating a trench capacitor
MOSEL VITELIC INC38 citations89
US6251722B1Jun 26, 2001
Method of fabricating a trench capacitor
MOSEL VITELIC INC29 citations89
US6423645B1Jul 23, 2002
Method for forming a self-aligned contact
MOSEL VITELIC INC16 citations81
US6037208AMar 14, 2000
Method for forming a deep trench capacitor of a DRAM cell
MOSEL VITELIC INC14 citations73
US6242357B1Jun 5, 2001
Method for forming a deep trench capacitor of a DRAM cell
MOSEL VITELIC INC3 citations62
US6232199B1May 15, 2001
Method for forming a multi-cylinder capacitor
MOSEL VITELIC INC2 citations62
US6190990B1Feb 20, 2001
Method for manufacturing the storage node of a capacitor on a semiconductor wafer
MOSEL VITELIC INC0 citations41
POWERCHIP SEMICONDUCTOR CORP
7 patentsUS7285450B2Oct 23, 2007
Method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP2 citations60
US7442998B2Oct 28, 2008
Non-volatile memory device
POWERCHIP SEMICONDUCTOR CORP1 citations50
US7285463B2Oct 23, 2007
Method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations49
US7166512B2Jan 23, 2007
Method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations49
US7915660B2Mar 29, 2011
Junction-free NAND flash memory and fabricating method thereof
POWERCHIP SEMICONDUCTOR CORP0 citations43
US7144774B1Dec 5, 2006
Method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations41
US7445993B2Nov 4, 2008
Method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations39
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD
4 patentsUS11955518B2Apr 9, 2024
Epitaxial structure and transistor including the same
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD2 citations71
US12199145B2Jan 14, 2025
Epitaxial structure and transistor including the same
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD0 citations61
US11264231B2Mar 1, 2022
Method for manufacturing backside metalized compound semiconductor wafer
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD0 citations50
US11823891B2Nov 21, 2023
Backside metallized compound semiconductor device and method for manufacturing the same
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD0 citations41