Inventor

KRISHNASAMY RAJENDRAN

US68 patents

⚠️ This page may combine multiple inventors who share the name “KRISHNASAMY RAJENDRAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KRISHNASAMY RAJENDRAN

GLOBALFOUNDRIES US INC

Unlanded thermal dissipation pillar adjacent active contact

Heterojunction bipolar transistor with buried trap rich isolation region

Field-effect transistors with a polycrystalline body in a shallow trench isolation region

Heterojunction bipolar transistors with one or more sealed airgap

Heterojunction bipolar transistor with buried trap rich isolation region

Photodetector structure with air gap and related methods

Electrically programmable fuse over lateral bipolar transistor

Integrated circuit structures with conductive pathway through resistive semiconductor material

Electrostatic discharge device with pinch resistor

Photodiodes

Integrated circuit structure with diode over lateral bipolar transistor

Photodetector with dual doped semiconductor material

Photodiode with integrated, self-aligned light focusing element

Photodiode with integrated, light focusing element

Pixel arrays including heterogenous photodiode types

Avalanche photodiode

High electron mobility transistors

E-fuse with metal fill

Photodiode with insulator layer along intrinsic region sidewall

Heterojunction bipolar transistor with amorphous semiconductor regions

High voltage device with linearizing field plate configuration

Photodetectors with substrate extensions adjacent photodiodes

Symmetric arrangement of field plates in semiconductor devices

Symmetric arrangement of field plates in semiconductor devices

Electrostatic discharge protection devices

Bipolar transistor with stepped emitter

High-mobility-electron transistors having heat dissipating structures

Gate tunnel current-triggered semiconductor controlled rectifier

Integrated circuit structure with resistive semiconductor material for back well

Structure including multi-level field plate and method of forming the structure

IBM

Methods to improve the SiGe heterojunction bipolar device performance

Method of doping field-effect-transistors (FETs) with reduced stress/strain relaxation and resulting FET devices

CMOS image sensor with reduced dark current

Methods to improve the SiGe heterojunction bipolar device performance

Silicon germanium heterojunction bipolar transistor structure and method

Bipolar transistor with collector having an epitaxial Si:C region

Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same

Method of fabricating patterned SOI devices and the resulting device structures

Method of fabrication for SiGe heterojunction bipolar transistor (HBT)

Bipolar transistor with collector having an epitaxial Si:C region

Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same

Pixel sensor cell with frame storage capability

Pixel sensor cell with frame storage capability

Pixel sensor with reduced image lag

Semiconductor devices and methods of manufacture thereof

Bias-controlled deep trench substrate noise isolation integrated circuit device structures

ADKISSON JAMES W

CMOS pixel sensor cells with poly spacer transfer gates and methods of manufacture

HAN JIN-PING

Semiconductor devices and methods of manufacture thereof

ULTRATECH INC

Silicon germanium heterojunction bipolar transistor structure and method

GLUSCHENKOV OLEG

Silicon germanium heterojunction bipolar transistor structure and method