Inventor
CHANG MING-BING
US20 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MING-BING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
7 patentsUS5841700ANov 24, 1998
Source-coupling, split gate, virtual ground flash EEPROM array
NAT SEMICONDUCTOR CORP91 citations96
US5644532AJul 1, 1997
Method for programming a cell in a source-coupling, split-gate, virtual ground flash EEPROM array
NAT SEMICONDUCTOR CORP20 citations92
US5412238AMay 2, 1995
Source-coupling, split-gate, virtual ground flash EEPROM array
NAT SEMICONDUCTOR CORP20 citations92
US5379254AJan 3, 1995
Asymmetrical alternate metal virtual ground EPROM array
NAT SEMICONDUCTOR CORP37 citations92
US5313419AMay 17, 1994
Self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM array
NAT SEMICONDUCTOR CORP26 citations92
US5506160AApr 9, 1996
Method of fabricating a self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM array
NAT SEMICONDUCTOR CORP17 citations82
US5480821AJan 2, 1996
Method of fabricating source-coupling, split-gate, virtual ground flash EEPROM array
NAT SEMICONDUCTOR CORP15 citations82
(unassigned)
5 patentsUS6101131AAug 8, 2000
Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
66 citations96
US6043530AMar 28, 2000
Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
72 citations96
US5991204ANov 23, 1999
Flash eeprom device employing polysilicon sidewall spacer as an erase gate
74 citations96
US6261907B1Jul 17, 2001
Method of forming a flash EEPROM device by employing polysilicon sidewall spacer as an erase gate
28 citations92
US6125060ASep 26, 2000
Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
25 citations92
WINBOND ELECTRONICS CORP
3 patentsUS6563733B2May 13, 2003
Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell
WINBOND ELECTRONICS CORP118 citations96
US6959279B1Oct 25, 2005
Text-to-speech conversion system on an integrated circuit
WINBOND ELECTRONICS CORP51 citations91
US6865186B1Mar 8, 2005
Multiple message multilevel analog signal recording and playback system having memory array configurable for analog and digital storage and serial communication
WINBOND ELECTRONICS CORP22 citations89
MOTOROLA INC
2 patentsTAIWAN SEMICONDUCTOR MFG
2 patentsUS5705439AJan 6, 1998
Method to make an asymmetrical LDD structure for deep sub-micron MOSFETS
TAIWAN SEMICONDUCTOR MFG29 citations92
US5612240AMar 18, 1997
Method for making electrical connections to self-aligned contacts that extends beyond the photo-lithographic resolution limit
TAIWAN SEMICONDUCTOR MFG37 citations92