Inventor
PARK SANG H
KR18 patents
⚠️ This page may combine multiple inventors who share the name “PARK SANG H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYUNDAI ELECTRONICS IND
14 patentsUS5536679AJul 16, 1996
Method for fabrication of semiconductor device capable of preventing short circuits
HYUNDAI ELECTRONICS IND20 citations92
US5518963AMay 21, 1996
Method for forming metal interconnection of semiconductor device
HYUNDAI ELECTRONICS IND26 citations92
US5445990AAug 29, 1995
Method for forming a field oxide film in a semiconductor device
HYUNDAI ELECTRONICS IND48 citations86
US5599731AFeb 4, 1997
Method of forming a field oxide film in a semiconductor device
HYUNDAI ELECTRONICS IND9 citations73
US5536671AJul 16, 1996
Method for fabricating capacitor of a semiconductor device
HYUNDAI ELECTRONICS IND10 citations73
US5527725AJun 18, 1996
Method for fabricating a metal oxide semiconductor field effect transistor
HYUNDAI ELECTRONICS IND12 citations73
US5472895ADec 5, 1995
Method for manufacturing a transistor of a semiconductor device
HYUNDAI ELECTRONICS IND16 citations73
US5449636ASep 12, 1995
Method for the fabrication of DRAM cell having a trench in the field oxide
HYUNDAI ELECTRONICS IND14 citations69
US5620911AApr 15, 1997
Method for fabricating a metal field effect transistor having a recessed gate
HYUNDAI ELECTRONICS IND4 citations62
US5610424AMar 11, 1997
Metal oxide semiconductor field effect transistor
HYUNDAI ELECTRONICS IND4 citations62
US5492849AFeb 20, 1996
Method of forming a capacitor in a semiconductor device
HYUNDAI ELECTRONICS IND6 citations62
US5376576ADec 27, 1994
Method for the insulation of polysilicon film in semiconductor device
HYUNDAI ELECTRONICS IND5 citations56
US5541136AJul 30, 1996
Method of forming a field oxide film in a semiconductor device
HYUNDAI ELECTRONICS IND0 citations51
US5386645AFeb 7, 1995
Rotary-type wafer drying apparatus with anti-deflection cover
HYUNDAI ELECTRONICS IND4 citations51
MAXIM INTEGRATED PRODUCTS
3 patentsUS6767798B2Jul 27, 2004
Method of forming self-aligned NPN transistor with raised extrinsic base
MAXIM INTEGRATED PRODUCTS32 citations90
US7026666B2Apr 11, 2006
Self-aligned NPN transistor with raised extrinsic base
MAXIM INTEGRATED PRODUCTS11 citations80
US6962842B1Nov 8, 2005
Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT
MAXIM INTEGRATED PRODUCTS5 citations61