Inventor
LEE ROGER R
US65 patents
⚠️ This page may combine multiple inventors who share the name “LEE ROGER R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
46 patentsUS6159818ADec 12, 2000
Method of forming a container capacitor structure
MICRON TECHNOLOGY INC88 citations99
US5424993AJun 13, 1995
Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device
MICRON TECHNOLOGY INC146 citations99
US5260593ANov 9, 1993
Semiconductor floating gate device having improved channel-floating gate interaction
MICRON TECHNOLOGY INC116 citations98
US5257225AOct 26, 1993
Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude
MICRON TECHNOLOGY INC125 citations98
US5200652AApr 6, 1993
Programmable/reprogrammable structure combining both antifuse and fuse elements
MICRON TECHNOLOGY INC118 citations98
US5175120ADec 29, 1992
Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors
MICRON TECHNOLOGY INC120 citations98
US5168073ADec 1, 1992
Method for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plate
MICRON TECHNOLOGY INC137 citations98
US6661051B1Dec 9, 2003
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC22 citations96
US6391735B1May 21, 2002
Container capacitor structure
MICRON TECHNOLOGY INC20 citations96
US6333240B1Dec 25, 2001
Method of spacing a capacitor from a contact site
MICRON TECHNOLOGY INC22 citations96
US6243299B1Jun 5, 2001
Flash memory system having fast erase operation
MICRON TECHNOLOGY INC52 citations96
US5680350AOct 21, 1997
Method for narrowing threshold voltage distribution in a block erased flash memory array
MICRON TECHNOLOGY INC79 citations96
US5306951AApr 26, 1994
Sidewall silicidation for improved reliability and conductivity
MICRON TECHNOLOGY INC57 citations96
US5301159AApr 5, 1994
Anti-fuse circuit and method wherein the read operation and programming operation are reversed
MICRON TECHNOLOGY INC52 citations96
US5282158AJan 25, 1994
Transistor antifuse for a programmable ROM
MICRON TECHNOLOGY INC81 citations96
US5257222AOct 26, 1993
Antifuse programming by transistor snap-back
MICRON TECHNOLOGY INC69 citations96
US5250459AOct 5, 1993
Electrically programmable low resistive antifuse element
MICRON TECHNOLOGY INC73 citations96
US5244826ASep 14, 1993
Method of forming an array of finned memory cell capacitors on a semiconductor substrate
MICRON TECHNOLOGY INC50 citations96
US5233206AAug 3, 1993
Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications
MICRON TECHNOLOGY INC81 citations96
US5229316AJul 20, 1993
Semiconductor processing method for forming substrate isolation trenches
MICRON TECHNOLOGY INC95 citations96
US5208177AMay 4, 1993
Local field enhancement for better programmability of antifuse PROM
MICRON TECHNOLOGY INC74 citations96
US5192703AMar 9, 1993
Method of making tungsten contact core stack capacitor
MICRON TECHNOLOGY INC86 citations96
US5707898AJan 13, 1998
Method of forming a programmable non-volatile memory cell by providing a shielding layer over the gate sidewalls
MICRON TECHNOLOGY INC43 citations95
US6329263B1Dec 11, 2001
Method of forming a container capacitor structure
MICRON TECHNOLOGY INC24 citations94
US6753565B1Jun 22, 2004
Container capacitor array having a common top capacitor plate
MICRON TECHNOLOGY INC16 citations93
US6693319B1Feb 17, 2004
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC14 citations93
US6620680B2Sep 16, 2003
Method of forming a contact structure and a container capacitor structure
MICRON TECHNOLOGY INC40 citations93
US6608342B1Aug 19, 2003
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC14 citations93
US6528834B1Mar 4, 2003
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC17 citations93
US6395600B1May 28, 2002
Method of forming a contact structure and a container capacitor structure
MICRON TECHNOLOGY INC41 citations93
US5748527AMay 5, 1998
Nonvolatile memory having transistor redundancy
MICRON TECHNOLOGY INC35 citations93
US5604366AFeb 18, 1997
Floating gate memory device having discontinuous gate oxide thickness over the channel region
MICRON TECHNOLOGY INC23 citations93
US5559742ASep 24, 1996
Flash memory having transistor redundancy
MICRON TECHNOLOGY INC29 citations93
US5513137AApr 30, 1996
Flash memory having transistor redundancy
MICRON TECHNOLOGY INC20 citations93
US5508959AApr 16, 1996
Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device
MICRON TECHNOLOGY INC25 citations93
US5360751ANov 1, 1994
Method of making a cell structure for a programmable read only memory device
MICRON TECHNOLOGY INC34 citations93
US5323038AJun 21, 1994
Array of finned memory cell capacitors on a semiconductor substrate
MICRON TECHNOLOGY INC45 citations93
US5262662ANov 16, 1993
Storage node capacitor having tungsten and etched tin storage node capacitor plate
MICRON TECHNOLOGY INC55 citations93
US5985719ANov 16, 1999
Method of forming a programmable non-volatile memory cell
MICRON TECHNOLOGY INC18 citations92
US5917755AJun 29, 1999
Flash memory system having fast erase operation
MICRON TECHNOLOGY INC40 citations92
US5726471AMar 10, 1998
Programmable non-volatile memory cell and method of forming a programmable non-volatile memory cell
MICRON TECHNOLOGY INC22 citations92
US6281091B1Aug 28, 2001
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC11 citations82
US5658814AAug 19, 1997
Method of forming a line of high density floating gate transistors
MICRON TECHNOLOGY INC12 citations82
US7625795B2Dec 1, 2009
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC2 citations74
US7160785B1Jan 9, 2007
Container capacitor structure and method of formation thereof
MICRON TECHNOLOGY INC4 citations74
US5981338ANov 9, 1999
High density flash memory
MICRON TECHNOLOGY INC9 citations74
MICRON SEMICONDUCTOR INC
3 patentsUS5292681AMar 8, 1994
Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors
MICRON SEMICONDUCTOR INC64 citations96
US5444279AAug 22, 1995
Floating gate memory device having discontinuous gate oxide thickness over the channel region
MICRON SEMICONDUCTOR INC34 citations93
US5270240ADec 14, 1993
Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines
MICRON SEMICONDUCTOR INC55 citations93
MICRON QUANTUM DEVICES INC
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