Inventor
KASAHARA OSAMU
JP31 patents
⚠️ This page may combine multiple inventors who share the name “KASAHARA OSAMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
21 patentsUS5780882AJul 14, 1998
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD33 citations96
US5498768AMar 12, 1996
Process for forming multilayer wiring
HITACHI LTD60 citations96
US5331191AJul 19, 1994
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD24 citations96
US5202275AApr 13, 1993
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD43 citations96
US5060045AOct 22, 1991
Semiconductor integrated circuit device and method of manufacturing the same
HITACHI LTD80 citations96
US5734188AMar 31, 1998
Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
HITACHI LTD73 citations95
US5917211AJun 29, 1999
Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
HITACHI LTD37 citations92
US5773340AJun 30, 1998
Method of manufacturing a BIMIS
HITACHI LTD26 citations92
US5670421ASep 23, 1997
Process for forming multilayer wiring
HITACHI LTD31 citations92
US5264712ANov 23, 1993
Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
HITACHI LTD27 citations92
US4907046AMar 6, 1990
Semiconductor device with multilayer silicon oxide silicon nitride dielectric
HITACHI LTD39 citations92
US4610774ASep 9, 1986
Target for sputtering
HITACHI LTD40 citations92
US4606802AAug 19, 1986
Planar magnetron sputtering with modified field configuration
HITACHI LTD36 citations92
US6548847B2Apr 15, 2003
Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film
HITACHI LTD12 citations82
US6342412B1Jan 29, 2002
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US6169324B1Jan 2, 2001
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD13 citations82
US6127255AOct 3, 2000
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US5811316ASep 22, 1998
Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring
HITACHI LTD8 citations82
US5739589AApr 14, 1998
Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same
HITACHI LTD13 citations82
US5557147ASep 17, 1996
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD7 citations74
US5468989ANov 21, 1995
Semiconductor integrated circuit device having an improved vertical bipolar transistor structure
HITACHI LTD10 citations67
HITACHI INT ELECTRIC INC
3 patentsUS7494941B2Feb 24, 2009
Manufacturing method of semiconductor device, and substrate processing apparatus
HITACHI INT ELECTRIC INC46 citations91
US6576063B2Jun 10, 2003
Apparatus and method for use in manufacturing a semiconductor device
HITACHI INT ELECTRIC INC8 citations73
US7033937B2Apr 25, 2006
Apparatus and method for use in manufacturing a semiconductor device
HITACHI INT ELECTRIC INC2 citations62