Inventor
ENAMI HIROMICHI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “ENAMI HIROMICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
24 patentsUS6755932B2Jun 29, 2004
Plasma processing system and apparatus and a sample processing method
HITACHI LTD290 citations98
US5780882AJul 14, 1998
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD33 citations96
US5331191AJul 19, 1994
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD24 citations96
US5202275AApr 13, 1993
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD43 citations96
US5734188AMar 31, 1998
Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
HITACHI LTD73 citations95
US4949162AAug 14, 1990
Semiconductor integrated circuit with dummy pedestals
HITACHI LTD91 citations95
US5352324AOct 4, 1994
Etching method and etching apparatus therefor
HITACHI LTD59 citations94
US5646489AJul 8, 1997
Plasma generator with mode restricting means
HITACHI LTD43 citations93
US5433789AJul 18, 1995
Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves
HITACHI LTD22 citations93
US5917211AJun 29, 1999
Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
HITACHI LTD37 citations92
US5264712ANov 23, 1993
Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
HITACHI LTD27 citations92
US5543336AAug 6, 1996
Removing damage caused by plasma etching and high energy implantation using hydrogen
HITACHI LTD39 citations91
US5401356AMar 28, 1995
Method and equipment for plasma processing
HITACHI LTD44 citations90
US6548847B2Apr 15, 2003
Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film
HITACHI LTD12 citations82
US6342412B1Jan 29, 2002
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US6169324B1Jan 2, 2001
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD13 citations82
US6127255AOct 3, 2000
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD8 citations82
US5811316ASep 22, 1998
Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring
HITACHI LTD8 citations82
US5739589AApr 14, 1998
Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same
HITACHI LTD13 citations82
US5557147ASep 17, 1996
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
HITACHI LTD7 citations74
US6923885B2Aug 2, 2005
Plasma processing system and apparatus and a sample processing method
HITACHI LTD11 citations73
US6754552B2Jun 22, 2004
Control apparatus for plasma utilizing equipment
HITACHI LTD11 citations73
US7686917B2Mar 30, 2010
Plasma processing system and apparatus and a sample processing method
HITACHI LTD2 citations62
US7169254B2Jan 30, 2007
Plasma processing system and apparatus and a sample processing method
HITACHI LTD3 citations62