Inventor
YEH JUANG-KE
TW12 patents
Patents
12 patentsUS6055183AApr 25, 2000
Erase method of flash EEPROM by using snapback characteristic
TAIWAN SEMICONDUCTOR MFG54 citations96
US5828605AOct 27, 1998
Snapback reduces the electron and hole trapping in the tunneling oxide of flash EEPROM
TAIWAN SEMICONDUCTOR MFG95 citations95
US6753569B2Jun 22, 2004
Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation
TAIWAN SEMICONDUCTOR MFG18 citations92
US6358796B1Mar 19, 2002
Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation
TAIWAN SEMICONDUCTOR MFG46 citations92
US6246089B1Jun 12, 2001
P-channel EEPROM devices
TAIWAN SEMICONDUCTOR MFG20 citations92
US6060360AMay 9, 2000
Method of manufacture of P-channel EEprom and flash EEprom devices
TAIWAN SEMICONDUCTOR MFG37 citations92
US6049484AApr 11, 2000
Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase
TAIWAN SEMICONDUCTOR MFG43 citations92
US5903499AMay 11, 1999
Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase
TAIWAN SEMICONDUCTOR MFG21 citations92
US5726933AMar 10, 1998
Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
TAIWAN SEMICONDUCTOR MFG43 citations92
US6509603B2Jan 21, 2003
P-channel EEPROM and flash EEPROM devices
TAIWAN SEMICONDUCTOR MFG9 citations73
US6121088ASep 19, 2000
Method of manufacture of undoped polysilicon as the floating-gate of a split-gate flash cell
TAIWAN SEMICONDUCTOR MFG4 citations63
US6483159B1Nov 19, 2002
Undoped polysilicon as the floating-gate of a split-gate flash cell
TAIWAN SEMICONDUCTOR MFG0 citations52