Inventor
HSIAO HSI-MAO
TW11 patents
⚠️ This page may combine multiple inventors who share the name “HSIAO HSI-MAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
6 patentsUS6245626B1Jun 12, 2001
Method of fabricating a MOS device using a sacrificial layer and spacer
UNITED MICROELECTRONICS CORP27 citations90
US6291354B1Sep 18, 2001
Method of fabricating a semiconductive device
UNITED MICROELECTRONICS CORP42 citations89
US6146971ANov 14, 2000
Process for forming a shallow trench isolation structure
UNITED MICROELECTRONICS CORP16 citations83
US6291279B1Sep 18, 2001
Method for forming different types of MOS transistors on a semiconductor wafer
UNITED MICROELECTRONICS CORP13 citations71
US6329291B1Dec 11, 2001
Method of forming a lower storage node of a capacitor for dynamic random access memory
UNITED MICROELECTRONICS CORP2 citations62
US6281133B1Aug 28, 2001
Method for forming an inter-layer dielectric layer
UNITED MICROELECTRONICS CORP1 citations47
UNITED SILICON INC
4 patentsUS6194279B1Feb 27, 2001
Fabrication method for gate spacer
UNITED SILICON INC30 citations90
US6191029B1Feb 20, 2001
Damascene process
UNITED SILICON INC39 citations88
US6200886B1Mar 13, 2001
Fabricating process for polysilicon gate
UNITED SILICON INC5 citations57
US6133091AOct 17, 2000
Method of fabricating a lower electrode of capacitor
UNITED SILICON INC1 citations50