Inventor
HASHIO KATSUSHI
JP12 patents
Patents
12 patentsUS6254677B1Jul 3, 2001
Semiconductor crystal, and method and apparatus of production thereof
SUMITOMO ELECTRIC INDUSTRIES19 citations83
US6866714B2Mar 15, 2005
Large size semiconductor crystal with low dislocation density
SUMITOMO ELECTRIC INDUSTRIES10 citations73
US6780244B2Aug 24, 2004
Method for producing a semiconductor crystal
SUMITOMO ELECTRIC INDUSTRIES7 citations73
US6572700B2Jun 3, 2003
Semiconductor crystal, and method and apparatus of production thereof
SUMITOMO ELECTRIC INDUSTRIES10 citations73
US5733371AMar 31, 1998
Apparatus for growing a single crystal
SUMITOMO ELECTRIC INDUSTRIES15 citations73
US5951758ASep 14, 1999
Method and apparatus for the growth of a single crystal
SUMITOMO ELECTRIC INDUSTRIES2 citations62
US12091773B2Sep 17, 2024
Indium phosphide single-crystal body and indium phosphide single-crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations58
US11313050B2Apr 26, 2022
Indium phosphide single-crystal body and indium phosphide single-crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations58
US10971374B2Apr 6, 2021
Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
SUMITOMO ELECTRIC INDUSTRIES0 citations58
US11319646B2May 3, 2022
Gallium arsenide single crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations56
US11926923B2Mar 12, 2024
Indium phosphide single crystal and indium phosphide single crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations54
US11024705B2Jun 1, 2021
Semi-insulating gallium arsenide crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations50