Inventor

FRIEDRICHS PETER

DE21 patents

⚠️ This page may combine multiple inventors who share the name “FRIEDRICHS PETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FRIEDRICHS PETER

SICED ELECT DEV GMBH & CO KG

Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material

Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure

Switching device for switching at a high operating voltage

SiC-PN power diode

Semiconductor construction with buried island region and contact region

Method for contacting a semiconductor configuration

Semiconductor structure with a switch element and an edge element

INFINEON TECHNOLOGIES AUSTRIA

Simplified switching circuit

Electronic circuit with a reverse conducting transistor device

Method for making an integrated circuit including vertical junction field effect transistors

SIEMENS AG

Electronic switching device

Electronic switching device and an operating method thereof

Method for manufacturing a mis structure on silicon carbide (SiC)

ELLISON ALEXANDRE

Lightly doped silicon carbide wafer and use thereof in high power devices

Lightly doped silicon carbide wafer and use thereof in high power devices

SIEMIENIEC RALF

Semiconductor device

SCICED ELECTRONICS DEV GMBH &

Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration

INFINEON TECHNOLOGIES AUSTRIA AG

Multi-device semiconductor chip with electrical access to devices at either side

NORSTEL AB

Lightly doped silicon carbide wafer and use thereof in high power devices

PETERS DETHARD

Transistor component having a shielding structure

ELPELT RUDOLF

Production method for a unipolar semiconductor component and semiconductor device