Inventor
SCHOERNER REINHOLD
DE20 patents
⚠️ This page may combine multiple inventors who share the name “SCHOERNER REINHOLD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SICED ELECT DEV GMBH & CO KG
10 patentsUS7615802B2Nov 10, 2009
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
SICED ELECT DEV GMBH & CO KG125 citations97
US6936850B2Aug 30, 2005
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material
SICED ELECT DEV GMBH & CO KG95 citations97
US6316791B1Nov 13, 2001
Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure
SICED ELECT DEV GMBH & CO KG78 citations96
US6204135B1Mar 20, 2001
Method for patterning semiconductors with high precision, good homogeneity and reproducibility
SICED ELECT DEV GMBH & CO KG76 citations96
US6468890B2Oct 22, 2002
Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device
SICED ELECT DEV GMBH & CO KG36 citations92
US7646026B2Jan 12, 2010
SiC-PN power diode
SICED ELECT DEV GMBH & CO KG8 citations84
US6693322B2Feb 17, 2004
Semiconductor construction with buried island region and contact region
SICED ELECT DEV GMBH & CO KG19 citations84
US6225680B1May 1, 2001
Semiconductor structure based on silicon carbide material, with a plurality electrically different partial regions
SICED ELECT DEV GMBH & CO KG2 citations63
US6815351B2Nov 9, 2004
Method for contacting a semiconductor configuration
SICED ELECT DEV GMBH & CO KG2 citations62
US7071503B2Jul 4, 2006
Semiconductor structure with a switch element and an edge element
SICED ELECT DEV GMBH & CO KG4 citations59
INFINEON TECHNOLOGIES AG
5 patentsUS10818749B2Oct 27, 2020
Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device
INFINEON TECHNOLOGIES AG6 citations73
US10861964B2Dec 8, 2020
Semiconductor device with junction termination zone
INFINEON TECHNOLOGIES AG1 citations61
US11177380B2Nov 16, 2021
Silicon carbide semiconductor component
INFINEON TECHNOLOGIES AG0 citations60
US10014383B2Jul 3, 2018
Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device
INFINEON TECHNOLOGIES AG0 citations52
US10541325B2Jan 21, 2020
Semiconductor device with termination structure including field zones and method of manufacturing
INFINEON TECHNOLOGIES AG0 citations51
SIEMENS AG
4 patentsUS7206178B2Apr 17, 2007
Electronic switching device
SIEMENS AG29 citations92
US7082020B2Jul 25, 2006
Electronic switching device and an operating method thereof
SIEMENS AG24 citations92
US6097039AAug 1, 2000
Silicon carbide semiconductor configuration with a high degree of channel mobility
SIEMENS AG33 citations92
US6117751ASep 12, 2000
Method for manufacturing a mis structure on silicon carbide (SiC)
SIEMENS AG7 citations73