Inventor
SALLING CRAIG T
US32 patents
⚠️ This page may combine multiple inventors who share the name “SALLING CRAIG T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
22 patentsUS6646906B2Nov 11, 2003
Methods of reading ferroelectric memory cells
MICRON TECHNOLOGY INC79 citations98
US6587365B1Jul 1, 2003
Array architecture for depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC63 citations96
US6515889B1Feb 4, 2003
Junction-isolated depletion mode ferroelectric memory
MICRON TECHNOLOGY INC25 citations96
US6876022B2Apr 5, 2005
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC16 citations93
US6665206B2Dec 16, 2003
Array architecture for depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC13 citations92
US6366489B1Apr 2, 2002
Bi-state ferroelectric memory devices, uses and operation
MICRON TECHNOLOGY INC17 citations92
US6574131B1Jun 3, 2003
Depletion mode ferroelectric memory device and method of writing to and reading from the same
MICRON TECHNOLOGY INC16 citations84
US6882560B2Apr 19, 2005
Reading ferroelectric memory cells
MICRON TECHNOLOGY INC11 citations82
US6791862B2Sep 14, 2004
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC7 citations82
US7002198B2Feb 21, 2006
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC4 citations74
US6982449B2Jan 3, 2006
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC2 citations74
US6944043B2Sep 13, 2005
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC2 citations74
US6903960B2Jun 7, 2005
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC5 citations74
US6888738B2May 3, 2005
Methods of writing junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC6 citations74
US6888747B2May 3, 2005
Methods of reading junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC4 citations74
US6888185B2May 3, 2005
Junction-isolated depletion mode ferroelectric memory devices
MICRON TECHNOLOGY INC4 citations74
US7236387B2Jun 26, 2007
Writing to ferroelectric memory devices
MICRON TECHNOLOGY INC1 citations63
US6937501B2Aug 30, 2005
Writing to ferroelectric memory devices
MICRON TECHNOLOGY INC2 citations63
US6522571B2Feb 18, 2003
Methods of forming and reading ferroelectric memory cells
MICRON TECHNOLOGY INC3 citations63
US7253464B2Aug 7, 2007
Junction-isolated depletion mode ferroelectric memory devices and systems
MICRON TECHNOLOGY INC0 citations52
US7199413B2Apr 3, 2007
Junction-isolated depletion mode ferroelectric memory devices and systems
MICRON TECHNOLOGY INC0 citations52
US7123503B2Oct 17, 2006
Writing to ferroelectric memory devices
MICRON TECHNOLOGY INC0 citations52
TEXAS INSTRUMENTS INC
10 patentsUS6858902B1Feb 22, 2005
Efficient ESD protection with application for low capacitance I/O pads
TEXAS INSTRUMENTS INC58 citations96
US6563175B2May 13, 2003
NMOS ESD protection device with thin silicide and methods for making same
TEXAS INSTRUMENTS INC30 citations91
US6875650B2Apr 5, 2005
Eliminating substrate noise by an electrically isolated high-voltage I/O transistor
TEXAS INSTRUMENTS INC19 citations84
US6724050B2Apr 20, 2004
ESD improvement by a vertical bipolar transistor with low breakdown voltage and high beta
TEXAS INSTRUMENTS INC13 citations84
US6900969B2May 31, 2005
ESD protection with uniform substrate bias
TEXAS INSTRUMENTS INC17 citations83
US7256460B2Aug 14, 2007
Body-biased pMOS protection against electrostatic discharge
TEXAS INSTRUMENTS INC8 citations74
US6764909B2Jul 20, 2004
Structure and method of MOS transistor having increased substrate resistance
TEXAS INSTRUMENTS INC9 citations73
US6835623B2Dec 28, 2004
NMOS ESD protection device with thin silicide and methods for making same
TEXAS INSTRUMENTS INC10 citations72
US6767810B2Jul 27, 2004
Method to increase substrate potential in MOS transistors used in ESD protection circuits
TEXAS INSTRUMENTS INC5 citations63
US6627955B2Sep 30, 2003
Structure and method of MOS transistor having increased substrate resistance
TEXAS INSTRUMENTS INC2 citations62