Inventor

DOMINGUEZ JUAN E

US23 patents

⚠️ This page may combine multiple inventors who share the name “DOMINGUEZ JUAN E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DOMINGUEZ JUAN E

INTEL CORP

Nanotube growth and device formation

Tunable gate electrode work function material for transistor applications

Silicon-alloy based barrier layers for integrated circuit metal interconnects

Composite metal films and carbon nanotube fabrication

Noble metal barrier and seed layer for semiconductors

Catalytically enhanced atomic layer deposition process

High density die package configuration on system boards

Method of fabricating a carbon nanotube interconnect structures

Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

Using unstable nitrides to form semiconductor structures

Amine-free deposition of metal-nitride films

Deposition process for iodine-doped ruthenium barrier layers

Alloyed underlayer for microelectronic interconnects

Silicon based optically degraded arc for lithographic patterning

System in package with interconnected modules

Using unstable nitrides to form semiconductor structures

Using unstable nitrides to form semiconductor structures

Deposition method for high-k dielectric materials

Optical coatings

LAVOIE ADRIEN R

Tunable gate electrode work function material for transistor applications

Noble metal barrier layers

DOMINGUEZ JUAN E

Surface charge enhanced atomic layer deposition of pure metallic films

ADVANCED TECH MATERIALS

Copper precursors for CVD/ALD/digital CVD of copper metal films