Inventor
KUO CHENG-CHENG
TW34 patents
⚠️ This page may combine multiple inventors who share the name “KUO CHENG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS10282504B2May 7, 2019
Method for improving circuit layout for manufacturability
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations93
US9536977B2Jan 3, 2017
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9184101B2Nov 10, 2015
Method for removing semiconductor fins using alternating masks
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations81
US10490654B2Nov 26, 2019
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10424652B2Sep 24, 2019
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10026656B2Jul 17, 2018
Metal gate features of semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9853125B2Dec 26, 2017
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9806172B2Oct 31, 2017
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9466714B2Oct 11, 2016
Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11011621B2May 18, 2021
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11392745B2Jul 19, 2022
Method for improving circuit layout for manufacturability
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12007431B2Jun 11, 2024
Test circuit and method for operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11990531B2May 21, 2024
Vertical tunneling field-effect transistor cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US10164076B2Dec 25, 2018
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10853552B2Dec 1, 2020
Method for improving circuit layout for manufacturability
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9536867B2Jan 3, 2017
N/P boundary effect reduction for metal gate transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9437485B2Sep 6, 2016
Method for line stress reduction through dummy shoulder structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9748107B2Aug 29, 2017
Method for removing semiconductor fins using alternating masks
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations49
TAIWAN SEMICONDUCTOR MFG
11 patentsUS8754470B1Jun 17, 2014
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG52 citations98
US7701034B2Apr 20, 2010
Dummy patterns in integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG23 citations92
US8381153B2Feb 19, 2013
Dissection splitting with optical proximity correction and mask rule check enforcement
TAIWAN SEMICONDUCTOR MFG21 citations91
US9190484B2Nov 17, 2015
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG6 citations84
US9029940B2May 12, 2015
Vertical tunneling field-effect transistor cell
TAIWAN SEMICONDUCTOR MFG4 citations73
US8883594B2Nov 11, 2014
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG4 citations73
US9355209B2May 31, 2016
Revising layout design through OPC to reduce corner rounding effect
TAIWAN SEMICONDUCTOR MFG5 citations72
US7778805B2Aug 17, 2010
Regression system and methods for optical proximity correction modeling
TAIWAN SEMICONDUCTOR MFG7 citations71
US9159826B2Oct 13, 2015
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG1 citations63
US9153581B2Oct 6, 2015
Vertical tunneling field-effect transistor cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9123694B2Sep 1, 2015
N/P boundary effect reduction for metal gate transistors
TAIWAN SEMICONDUCTOR MFG0 citations51