P

Inventor

FRISINA FERRUCCIO

IT95 patents
⚠️ This page may combine multiple inventors who share the name “FRISINA FERRUCCIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SGS THOMSON MICROELECTRONICS

22 patents
US5981343ANov 9, 1999

Single feature size mos technology power device

SGS THOMSON MICROELECTRONICS43 citations96
US5817546AOct 6, 1998

Process of making a MOS-technology power device

SGS THOMSON MICROELECTRONICS86 citations96
US6222232B1Apr 24, 2001

Asymmetric MOS technology power device

SGS THOMSON MICROELECTRONICS18 citations93
US6140679AOct 31, 2000

Zero thermal budget manufacturing process for MOS-technology power devices

SGS THOMSON MICROELECTRONICS17 citations93
US6054737AApr 25, 2000

High density MOS technology power device

SGS THOMSON MICROELECTRONICS16 citations93
US5981998ANov 9, 1999

Single feature size MOS technology power device

SGS THOMSON MICROELECTRONICS18 citations93
US5933733AAug 3, 1999

Zero thermal budget manufacturing process for MOS-technology power devices

SGS THOMSON MICROELECTRONICS24 citations93
US5933734AAug 3, 1999

High speed MOS-technology power device integrated structure, and related manufacturing process

SGS THOMSON MICROELECTRONICS22 citations93
US5883412AMar 16, 1999

Low gate resistance high-speed MOS-technology integrated structure

SGS THOMSON MICROELECTRONICS19 citations93
US5874338AFeb 23, 1999

MOS-technology power device and process of making same

SGS THOMSON MICROELECTRONICS20 citations93
US6051862AApr 18, 2000

MOS-technology power device integrated structure

SGS THOMSON MICROELECTRONICS21 citations92
US5900662AMay 4, 1999

MOS technology power device with low output resistance and low capacitance, and related manufacturing process

SGS THOMSON MICROELECTRONICS45 citations91
US5118635AJun 2, 1992

Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process

SGS THOMSON MICROELECTRONICS16 citations82
US5065213ANov 12, 1991

Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process

SGS THOMSON MICROELECTRONICS16 citations82
US6566690B2May 20, 2003

Single feature size MOS technology power device

SGS THOMSON MICROELECTRONICS6 citations74
US6468866B2Oct 22, 2002

Single feature size MOS technology power device

SGS THOMSON MICROELECTRONICS7 citations74
US6326271B2Dec 4, 2001

Asymmetric MOS technology power device

SGS THOMSON MICROELECTRONICS14 citations74
US6064087AMay 16, 2000

Single feature size MOS technology power device

SGS THOMSON MICROELECTRONICS5 citations74
US6030870AFeb 29, 2000

High density MOS technology power device

SGS THOMSON MICROELECTRONICS5 citations74
US5985721ANov 16, 1999

Single feature size MOS technology power device

SGS THOMSON MICROELECTRONICS10 citations74
US5851855ADec 22, 1998

Process for manufacturing a MOS-technology power device chip and package assembly

SGS THOMSON MICROELECTRONICS6 citations74
US5841167ANov 24, 1998

MOS-technology power device integrated structure

SGS THOMSON MICROELECTRONICS13 citations73

ST MICROELECTRONICS SRL

20 patents
US6300171B1Oct 9, 2001

Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure

ST MICROELECTRONICS SRL158 citations99
US6586798B1Jul 1, 2003

High voltage MOS-gated power device

ST MICROELECTRONICS SRL58 citations96
US6391723B1May 21, 2002

Fabrication of VDMOS structure with reduced parasitic effects

ST MICROELECTRONICS SRL72 citations96
US6228719B1May 8, 2001

MOS technology power device with low output resistance and low capacitance, and related manufacturing process

ST MICROELECTRONICS SRL65 citations94
US5670392ASep 23, 1997

Process for manufacturing high-density MOS-technology power devices

ST MICROELECTRONICS SRL41 citations93
US5631483AMay 20, 1997

Power device integrated structure with low saturation voltage

ST MICROELECTRONICS SRL45 citations93
US6841836B2Jan 11, 2005

Integrated device with Schottky diode and MOS transistor and related manufacturing process

ST MICROELECTRONICS SRL22 citations92
US6404010B2Jun 11, 2002

MOS technology power device

ST MICROELECTRONICS SRL36 citations92
US6040609AMar 21, 2000

Process for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltages

ST MICROELECTRONICS SRL26 citations90
US8921211B2Dec 30, 2014

Vertical-conduction integrated electronic device and method for manufacturing thereof

ST MICROELECTRONICS SRL5 citations84
US9406504B2Aug 2, 2016

Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer

ST MICROELECTRONICS SRL7 citations82
US6943390B2Sep 13, 2005

High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same

ST MICROELECTRONICS SRL19 citations82
US6828598B1Dec 7, 2004

Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device

ST MICROELECTRONICS SRL19 citations82
US6433399B1Aug 13, 2002

Infrared detector device of semiconductor material and manufacturing process thereof

ST MICROELECTRONICS SRL15 citations79
US7498619B2Mar 3, 2009

Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process

ST MICROELECTRONICS SRL12 citations77
US7875936B2Jan 25, 2011

Power MOS electronic device and corresponding realizing method

ST MICROELECTRONICS SRL6 citations74
US6492691B2Dec 10, 2002

High integration density MOS technology power device structure

ST MICROELECTRONICS SRL13 citations74
US5631476AMay 20, 1997

MOS-technology power device chip and package assembly

ST MICROELECTRONICS SRL9 citations74
US7067363B2Jun 27, 2006

Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density

ST MICROELECTRONICS SRL7 citations73
US7569883B2Aug 4, 2009

Switching-controlled power MOS electronic device

ST MICROELECTRONICS SRL7 citations72

CONS RIC MICROELETTRONICA

4 patents

SGS MICROELETTRONICA SPA

1 patent

FRISINA FERRUCCIO

1 patent

SGS THOMSON MICROELECTTRONICA

1 patent

CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

1 patent

Showing the top 50 of 95 patents by PatentIndex Score.