Inventor
FRISINA FERRUCCIO
IT95 patents
⚠️ This page may combine multiple inventors who share the name “FRISINA FERRUCCIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
22 patentsUS5981343ANov 9, 1999
Single feature size mos technology power device
SGS THOMSON MICROELECTRONICS43 citations96
US5817546AOct 6, 1998
Process of making a MOS-technology power device
SGS THOMSON MICROELECTRONICS86 citations96
US6222232B1Apr 24, 2001
Asymmetric MOS technology power device
SGS THOMSON MICROELECTRONICS18 citations93
US6140679AOct 31, 2000
Zero thermal budget manufacturing process for MOS-technology power devices
SGS THOMSON MICROELECTRONICS17 citations93
US6054737AApr 25, 2000
High density MOS technology power device
SGS THOMSON MICROELECTRONICS16 citations93
US5981998ANov 9, 1999
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS18 citations93
US5933733AAug 3, 1999
Zero thermal budget manufacturing process for MOS-technology power devices
SGS THOMSON MICROELECTRONICS24 citations93
US5933734AAug 3, 1999
High speed MOS-technology power device integrated structure, and related manufacturing process
SGS THOMSON MICROELECTRONICS22 citations93
US5883412AMar 16, 1999
Low gate resistance high-speed MOS-technology integrated structure
SGS THOMSON MICROELECTRONICS19 citations93
US5874338AFeb 23, 1999
MOS-technology power device and process of making same
SGS THOMSON MICROELECTRONICS20 citations93
US6051862AApr 18, 2000
MOS-technology power device integrated structure
SGS THOMSON MICROELECTRONICS21 citations92
US5900662AMay 4, 1999
MOS technology power device with low output resistance and low capacitance, and related manufacturing process
SGS THOMSON MICROELECTRONICS45 citations91
US5118635AJun 2, 1992
Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process
SGS THOMSON MICROELECTRONICS16 citations82
US5065213ANov 12, 1991
Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process
SGS THOMSON MICROELECTRONICS16 citations82
US6566690B2May 20, 2003
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS6 citations74
US6468866B2Oct 22, 2002
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS7 citations74
US6326271B2Dec 4, 2001
Asymmetric MOS technology power device
SGS THOMSON MICROELECTRONICS14 citations74
US6064087AMay 16, 2000
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS5 citations74
US6030870AFeb 29, 2000
High density MOS technology power device
SGS THOMSON MICROELECTRONICS5 citations74
US5985721ANov 16, 1999
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS10 citations74
US5851855ADec 22, 1998
Process for manufacturing a MOS-technology power device chip and package assembly
SGS THOMSON MICROELECTRONICS6 citations74
US5841167ANov 24, 1998
MOS-technology power device integrated structure
SGS THOMSON MICROELECTRONICS13 citations73
ST MICROELECTRONICS SRL
20 patentsUS6300171B1Oct 9, 2001
Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure
ST MICROELECTRONICS SRL158 citations99
US6586798B1Jul 1, 2003
High voltage MOS-gated power device
ST MICROELECTRONICS SRL58 citations96
US6391723B1May 21, 2002
Fabrication of VDMOS structure with reduced parasitic effects
ST MICROELECTRONICS SRL72 citations96
US6228719B1May 8, 2001
MOS technology power device with low output resistance and low capacitance, and related manufacturing process
ST MICROELECTRONICS SRL65 citations94
US5670392ASep 23, 1997
Process for manufacturing high-density MOS-technology power devices
ST MICROELECTRONICS SRL41 citations93
US5631483AMay 20, 1997
Power device integrated structure with low saturation voltage
ST MICROELECTRONICS SRL45 citations93
US6841836B2Jan 11, 2005
Integrated device with Schottky diode and MOS transistor and related manufacturing process
ST MICROELECTRONICS SRL22 citations92
US6404010B2Jun 11, 2002
MOS technology power device
ST MICROELECTRONICS SRL36 citations92
US6040609AMar 21, 2000
Process for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltages
ST MICROELECTRONICS SRL26 citations90
US8921211B2Dec 30, 2014
Vertical-conduction integrated electronic device and method for manufacturing thereof
ST MICROELECTRONICS SRL5 citations84
US9406504B2Aug 2, 2016
Reaction chamber including a susceptor having draining openings for manufacturing a silicon carbide wafer
ST MICROELECTRONICS SRL7 citations82
US6943390B2Sep 13, 2005
High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same
ST MICROELECTRONICS SRL19 citations82
US6828598B1Dec 7, 2004
Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device
ST MICROELECTRONICS SRL19 citations82
US6433399B1Aug 13, 2002
Infrared detector device of semiconductor material and manufacturing process thereof
ST MICROELECTRONICS SRL15 citations79
US7498619B2Mar 3, 2009
Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process
ST MICROELECTRONICS SRL12 citations77
US7875936B2Jan 25, 2011
Power MOS electronic device and corresponding realizing method
ST MICROELECTRONICS SRL6 citations74
US6492691B2Dec 10, 2002
High integration density MOS technology power device structure
ST MICROELECTRONICS SRL13 citations74
US5631476AMay 20, 1997
MOS-technology power device chip and package assembly
ST MICROELECTRONICS SRL9 citations74
US7067363B2Jun 27, 2006
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density
ST MICROELECTRONICS SRL7 citations73
US7569883B2Aug 4, 2009
Switching-controlled power MOS electronic device
ST MICROELECTRONICS SRL7 citations72
CONS RIC MICROELETTRONICA
4 patentsUS5886381AMar 23, 1999
MOS integrated device comprising a gate protection diode
CONS RIC MICROELETTRONICA31 citations93
US5227315AJul 13, 1993
Process of introduction and diffusion of platinum ions in a slice of silicon
CONS RIC MICROELETTRONICA37 citations87
US5569612AOct 29, 1996
Process for manufacturing a bipolar power transistor having a high breakdown voltage
CONS RIC MICROELETTRONICA16 citations82
US5468660ANov 21, 1995
Process for manufacturing an integrated bipolar power device and a fast diode
CONS RIC MICROELETTRONICA7 citations74
SGS MICROELETTRONICA SPA
1 patentFRISINA FERRUCCIO
1 patentSGS THOMSON MICROELECTTRONICA
1 patentCONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
1 patentShowing the top 50 of 95 patents by PatentIndex Score.