Inventor
TSAI SHUANG-JI
TW47 patents
⚠️ This page may combine multiple inventors who share the name “TSAI SHUANG-JI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS9972603B2May 15, 2018
Seal-ring structure for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations93
US10566378B2Feb 18, 2020
Back side illuminated image sensor with reduced sidewall-induced leakage
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9570497B2Feb 14, 2017
Back side illuminated image sensor having isolated bonding pads
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10777539B2Sep 15, 2020
Seal-ring structure for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11476295B2Oct 18, 2022
Back side illuminated image sensor with reduced sidewall-induced leakage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11011567B2May 18, 2021
Structure and method for 3D image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9837464B2Dec 5, 2017
Backside structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9627430B2Apr 18, 2017
Method and apparatus for low resistance image sensor contact
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9576999B2Feb 21, 2017
Backside structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10475772B2Nov 12, 2019
Seal-ring structure for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10157895B2Dec 18, 2018
Seal-ring structure for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11901396B2Feb 13, 2024
Back side illuminated image sensor with reduced sidewall-induced leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10062728B2Aug 28, 2018
Image sensor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9653508B2May 16, 2017
Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9525003B2Dec 20, 2016
Structure and method for 3D image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11923392B2Mar 5, 2024
Enhanced design for image sensing technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535696B2Jan 14, 2020
Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9812487B2Nov 7, 2017
Structure and method for 3D image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9761629B2Sep 12, 2017
Image sensor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9613996B2Apr 4, 2017
Backside structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9401380B2Jul 26, 2016
Backside structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10535697B2Jan 14, 2020
Structure and method for 3D Image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
12 patentsUS8736006B1May 27, 2014
Backside structure for a BSI image sensor device
TAIWAN SEMICONDUCTOR MFG31 citations93
US9305966B2Apr 5, 2016
Backside structure and method for BSI image sensors
TAIWAN SEMICONDUCTOR MFG5 citations84
US9287312B2Mar 15, 2016
Imaging sensor structure and method
TAIWAN SEMICONDUCTOR MFG7 citations84
US8969991B2Mar 3, 2015
Backside structure and methods for BSI image sensors
TAIWAN SEMICONDUCTOR MFG8 citations84
US9041206B2May 26, 2015
Interconnect structure and method
TAIWAN SEMICONDUCTOR MFG11 citations83
US8628990B1Jan 14, 2014
Image device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG9 citations81
US9245912B2Jan 26, 2016
Method and apparatus for low resistance image sensor contact
TAIWAN SEMICONDUCTOR MFG2 citations63
US9184207B2Nov 10, 2015
Pad structures formed in double openings in dielectric layers
TAIWAN SEMICONDUCTOR MFG2 citations63
US9142690B2Sep 22, 2015
Semiconductor device having a bonding pad and shield structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG2 citations63
US9059061B2Jun 16, 2015
Structure and method for 3D image sensor
TAIWAN SEMICONDUCTOR MFG3 citations63
US9362329B2Jun 7, 2016
Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips
TAIWAN SEMICONDUCTOR MFG0 citations52
US9147702B2Sep 29, 2015
Image sensor for mitigating dark current
TAIWAN SEMICONDUCTOR MFG0 citations52
TSAI SHUANG-JI
6 patentsUS9165970B2Oct 20, 2015
Back side illuminated image sensor having isolated bonding pads
TSAI SHUANG-JI8 citations84
US8435824B2May 7, 2013
Backside illumination sensor having a bonding pad structure and method of making the same
TSAI SHUANG-JI18 citations83
US9455288B2Sep 27, 2016
Image sensor structure to reduce cross-talk and improve quantum efficiency
TSAI SHUANG-JI4 citations73
US8710612B2Apr 29, 2014
Semiconductor device having a bonding pad and shield structure of different thickness
TSAI SHUANG-JI4 citations72
US8946849B2Feb 3, 2015
BSI image sensor chips with separated color filters and methods for forming the same
TSAI SHUANG-JI2 citations62
US8664736B2Mar 4, 2014
Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same
TSAI SHUANG-JI3 citations62
LIN JENG-SHYAN
4 patentsUS9224770B2Dec 29, 2015
Image sensor device and method
LIN JENG-SHYAN7 citations84
US8941204B2Jan 27, 2015
Apparatus and method for reducing cross talk in image sensors
LIN JENG-SHYAN10 citations84
US9013022B2Apr 21, 2015
Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips
LIN JENG-SHYAN7 citations83
US8987855B2Mar 24, 2015
Pad structures formed in double openings in dielectric layers
LIN JENG-SHYAN1 citations51