Inventor
SCHOLZE ANDREAS
US12 patents
⚠️ This page may combine multiple inventors who share the name “SCHOLZE ANDREAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
6 patentsUS9390976B2Jul 12, 2016
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
IBM8 citations84
US9391065B1Jul 12, 2016
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
IBM5 citations84
US11101367B2Aug 24, 2021
Contact-first field-effect transistors
IBM0 citations62
US10249714B2Apr 2, 2019
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
IBM0 citations52
US9793272B2Oct 17, 2017
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage
IBM0 citations52
US9786661B2Oct 10, 2017
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
IBM0 citations52
GLOBALFOUNDRIES INC
5 patentsUS9786765B2Oct 10, 2017
FINFET having notched fins and method of forming same
GLOBALFOUNDRIES INC7 citations83
US9536882B2Jan 3, 2017
Field-isolated bulk FinFET
GLOBALFOUNDRIES INC3 citations73
US10297589B2May 21, 2019
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
GLOBALFOUNDRIES INC0 citations52
US9704852B2Jul 11, 2017
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
GLOBALFOUNDRIES INC1 citations52
US9601513B1Mar 21, 2017
Subsurface wires of integrated chip and methods of forming
GLOBALFOUNDRIES INC1 citations52