P

Inventor

HUANG WEI-HANG

TW29 patents
⚠️ This page may combine multiple inventors who share the name “HUANG WEI-HANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

18 patents
US9196825B2Nov 24, 2015

Reversed stack MTJ

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US10529916B2Jan 7, 2020

Reversed stack MTJ

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9685604B2Jun 20, 2017

Magnetoresistive random access memory cell and fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9620372B2Apr 11, 2017

HK embodied flash memory and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9614145B2Apr 4, 2017

Reversed stack MTJ

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10181558B2Jan 15, 2019

Magnetoresistive random access memory structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9608195B2Mar 28, 2017

Magnetic tunnel junction device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9564448B2Feb 7, 2017

Flash memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9397228B2Jul 19, 2016

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9391085B2Jul 12, 2016

Self-aligned split gate flash memory having liner-separated spacers above the memory gate

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9595661B2Mar 14, 2017

Magnetoresistive random access memory structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11258007B2Feb 22, 2022

Reversed stack MTJ

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937956B2Mar 2, 2021

Magnetoresistive random access memory structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10840438B2Nov 17, 2020

Reversed stack MTJ

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10825825B2Nov 3, 2020

Flash memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10355011B2Jul 16, 2019

Method for forming flash memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9859295B2Jan 2, 2018

Method for forming flash memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9048316B2Jun 2, 2015

Flash memory structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

5 patents

HUANG WEI-HANG

3 patents

UNITED MICROELECTRONICS CORP

2 patents

SHIH HUNG-LING

1 patent