Inventor
HUANG WEI-HANG
TW29 patents
⚠️ This page may combine multiple inventors who share the name “HUANG WEI-HANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS9196825B2Nov 24, 2015
Reversed stack MTJ
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US10529916B2Jan 7, 2020
Reversed stack MTJ
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9685604B2Jun 20, 2017
Magnetoresistive random access memory cell and fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9620372B2Apr 11, 2017
HK embodied flash memory and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9614145B2Apr 4, 2017
Reversed stack MTJ
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10181558B2Jan 15, 2019
Magnetoresistive random access memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9608195B2Mar 28, 2017
Magnetic tunnel junction device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9564448B2Feb 7, 2017
Flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9397228B2Jul 19, 2016
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9391085B2Jul 12, 2016
Self-aligned split gate flash memory having liner-separated spacers above the memory gate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9595661B2Mar 14, 2017
Magnetoresistive random access memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11258007B2Feb 22, 2022
Reversed stack MTJ
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937956B2Mar 2, 2021
Magnetoresistive random access memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10840438B2Nov 17, 2020
Reversed stack MTJ
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10825825B2Nov 3, 2020
Flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10355011B2Jul 16, 2019
Method for forming flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9859295B2Jan 2, 2018
Method for forming flash memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9048316B2Jun 2, 2015
Flash memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
5 patentsUS9136393B2Sep 15, 2015
HK embodied flash memory and methods of forming the same
TAIWAN SEMICONDUCTOR MFG8 citations84
US9306158B2Apr 5, 2016
MRAM device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG3 citations73
US9172033B2Oct 27, 2015
MRAM device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG4 citations73
US9142761B2Sep 22, 2015
Method for fabricating a magnetic tunnel junction device
TAIWAN SEMICONDUCTOR MFG3 citations63
US8822237B2Sep 2, 2014
Hole first hardmask definition
TAIWAN SEMICONDUCTOR MFG1 citations63