P

Inventor

SAPRA SANJEEV

US31 patents
⚠️ This page may combine multiple inventors who share the name “SAPRA SANJEEV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

23 patents
US9653307B1May 16, 2017

Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures

MICRON TECHNOLOGY INC23 citations93
US10916418B2Feb 9, 2021

Using sacrificial polymer materials in semiconductor processing

MICRON TECHNOLOGY INC2 citations71
US10497558B2Dec 3, 2019

Using sacrificial polymer materials in semiconductor processing

MICRON TECHNOLOGY INC3 citations71
US10811419B1Oct 20, 2020

Storage node shaping

MICRON TECHNOLOGY INC4 citations70
US11469103B2Oct 11, 2022

Semiconductor structure formation

MICRON TECHNOLOGY INC0 citations61
US11114443B2Sep 7, 2021

Semiconductor structure formation

MICRON TECHNOLOGY INC0 citations61
US11011523B2May 18, 2021

Column formation using sacrificial material

MICRON TECHNOLOGY INC1 citations61
US10978553B2Apr 13, 2021

Formation of a capacitor using a hard mask

MICRON TECHNOLOGY INC1 citations61
US10930499B2Feb 23, 2021

Semiconductor structure formation

MICRON TECHNOLOGY INC0 citations61
US11651952B2May 16, 2023

Using sacrificial polymer materials in semiconductor processing

MICRON TECHNOLOGY INC0 citations60
US11127588B2Sep 21, 2021

Semiconductor processing applying supercritical drying

MICRON TECHNOLOGY INC0 citations60
US11322388B2May 3, 2022

Semiconductor structure formation

MICRON TECHNOLOGY INC0 citations59
US11011521B2May 18, 2021

Semiconductor structure patterning

MICRON TECHNOLOGY INC1 citations59
US12193208B2Jan 7, 2025

Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods

MICRON TECHNOLOGY INC0 citations56
US10978306B2Apr 13, 2021

Semiconductor recess formation

MICRON TECHNOLOGY INC0 citations55
US9397210B2Jul 19, 2016

Forming air gaps in memory arrays and memory arrays with air gaps thus formed

MICRON TECHNOLOGY INC0 citations51
US10964475B2Mar 30, 2021

Formation of a capacitor using a sacrificial layer

MICRON TECHNOLOGY INC0 citations49
US10546923B2Jan 28, 2020

Semiconductor assemblies having semiconductor material regions with contoured upper surfaces; and methods of forming semiconductor assemblies utilizing etching to contour upper surfaces of semiconductor material

MICRON TECHNOLOGY INC0 citations48
US10374033B1Aug 6, 2019

Semiconductor assemblies having semiconductor material regions with contoured upper surfaces

MICRON TECHNOLOGY INC0 citations48
US12432943B2Sep 30, 2025

Over-sculpted storage node

MICRON TECHNOLOGY INC0 citations47
US11361972B2Jun 14, 2022

Methods for selectively removing more-doped-silicon-dioxide relative to less-doped-silicon-dioxide

MICRON TECHNOLOGY INC0 citations43
US10607851B2Mar 31, 2020

Vapor-etch cyclic process

MICRON TECHNOLOGY INC0 citations40
US10777561B2Sep 15, 2020

Semiconductor structure formation

MICRON TECHNOLOGY INC0 citations39

SAPRA SANJEEV

4 patents

GOODNER DUANE M

2 patents

NANYA TECHNOLOGY CORP

1 patent

MATHEW JAMES

1 patent