Inventor
SAPRA SANJEEV
US31 patents
⚠️ This page may combine multiple inventors who share the name “SAPRA SANJEEV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
23 patentsUS9653307B1May 16, 2017
Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures
MICRON TECHNOLOGY INC23 citations93
US10916418B2Feb 9, 2021
Using sacrificial polymer materials in semiconductor processing
MICRON TECHNOLOGY INC2 citations71
US10497558B2Dec 3, 2019
Using sacrificial polymer materials in semiconductor processing
MICRON TECHNOLOGY INC3 citations71
US10811419B1Oct 20, 2020
Storage node shaping
MICRON TECHNOLOGY INC4 citations70
US11469103B2Oct 11, 2022
Semiconductor structure formation
MICRON TECHNOLOGY INC0 citations61
US11114443B2Sep 7, 2021
Semiconductor structure formation
MICRON TECHNOLOGY INC0 citations61
US11011523B2May 18, 2021
Column formation using sacrificial material
MICRON TECHNOLOGY INC1 citations61
US10978553B2Apr 13, 2021
Formation of a capacitor using a hard mask
MICRON TECHNOLOGY INC1 citations61
US10930499B2Feb 23, 2021
Semiconductor structure formation
MICRON TECHNOLOGY INC0 citations61
US11651952B2May 16, 2023
Using sacrificial polymer materials in semiconductor processing
MICRON TECHNOLOGY INC0 citations60
US11127588B2Sep 21, 2021
Semiconductor processing applying supercritical drying
MICRON TECHNOLOGY INC0 citations60
US11322388B2May 3, 2022
Semiconductor structure formation
MICRON TECHNOLOGY INC0 citations59
US11011521B2May 18, 2021
Semiconductor structure patterning
MICRON TECHNOLOGY INC1 citations59
US12193208B2Jan 7, 2025
Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods
MICRON TECHNOLOGY INC0 citations56
US10978306B2Apr 13, 2021
Semiconductor recess formation
MICRON TECHNOLOGY INC0 citations55
US9397210B2Jul 19, 2016
Forming air gaps in memory arrays and memory arrays with air gaps thus formed
MICRON TECHNOLOGY INC0 citations51
US10964475B2Mar 30, 2021
Formation of a capacitor using a sacrificial layer
MICRON TECHNOLOGY INC0 citations49
US10546923B2Jan 28, 2020
Semiconductor assemblies having semiconductor material regions with contoured upper surfaces; and methods of forming semiconductor assemblies utilizing etching to contour upper surfaces of semiconductor material
MICRON TECHNOLOGY INC0 citations48
US10374033B1Aug 6, 2019
Semiconductor assemblies having semiconductor material regions with contoured upper surfaces
MICRON TECHNOLOGY INC0 citations48
US12432943B2Sep 30, 2025
Over-sculpted storage node
MICRON TECHNOLOGY INC0 citations47
US11361972B2Jun 14, 2022
Methods for selectively removing more-doped-silicon-dioxide relative to less-doped-silicon-dioxide
MICRON TECHNOLOGY INC0 citations43
US10607851B2Mar 31, 2020
Vapor-etch cyclic process
MICRON TECHNOLOGY INC0 citations40
US10777561B2Sep 15, 2020
Semiconductor structure formation
MICRON TECHNOLOGY INC0 citations39
SAPRA SANJEEV
4 patentsUS9117759B2Aug 25, 2015
Methods of forming bulb-shaped trenches in silicon
SAPRA SANJEEV6 citations71
US8283259B2Oct 9, 2012
Methods of removing a metal nitride material
SAPRA SANJEEV3 citations61
US8546016B2Oct 1, 2013
Solutions for cleaning semiconductor structures and related methods
SAPRA SANJEEV2 citations60
US8586483B2Nov 19, 2013
Semiconductor device structures and compositions for forming same
SAPRA SANJEEV0 citations51