P

Inventor

GOCHO TETSUO

JP20 patents
⚠️ This page may combine multiple inventors who share the name “GOCHO TETSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONY CORP

14 patents
US5498565AMar 12, 1996

Method of forming trench isolation having polishing step and method of manufacturing semiconductor device

SONY CORP137 citations97
US5698352ADec 16, 1997

Semiconductor device containing Si, O and N anti-reflective layer

SONY CORP75 citations96
US5641607AJun 24, 1997

Anti-reflective layer used to form a semiconductor device

SONY CORP85 citations96
US5472827ADec 5, 1995

Method of forming a resist pattern using an anti-reflective layer

SONY CORP53 citations96
US5632910AMay 27, 1997

Multilayer resist pattern forming method

SONY CORP74 citations95
US5600165AFeb 4, 1997

Semiconductor device with antireflection film

SONY CORP90 citations95
US6258654B1Jul 10, 2001

Method of manufacturing a semiconductor device

SONY CORP52 citations92
US5700349ADec 23, 1997

Method for forming multi-layer interconnections

SONY CORP32 citations92
US5648202AJul 15, 1997

Method of forming a photoresist pattern using an anti-reflective

SONY CORP32 citations92
US5502008AMar 26, 1996

Method for forming metal plug and/or wiring metal layer

SONY CORP30 citations92
US5254171AOct 19, 1993

Bias ECR plasma CVD apparatus comprising susceptor, clamp, and chamber wall heating and cooling means

SONY CORP52 citations92
US6218266B1Apr 17, 2001

Method of fabricating electronic devices of the type including smoothing process using polishing

SONY CORP14 citations74
US5242853ASep 7, 1993

Manufacturing process for a semiconductor device using bias ecrcvd and an etch stop layer

SONY CORP13 citations74
USRE38363EDec 23, 2003

Method of forming trench isolation having polishing step and method of manufacturing semiconductor device

SONY CORP6 citations62

SONY SEMICONDUCTOR SOLUTIONS CORP

6 patents