Inventor

PANDEY PRATYUSH

US25 patents

Patents

25 patents

US11423967B1Aug 23, 2022

Stacked ferroelectric non-planar capacitors in a memory bit-cell

KEPLER COMPUTING INC35 citations98

US11545204B1Jan 3, 2023

Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels

KEPLER COMPUTING INC10 citations94

US11532635B1Dec 20, 2022

High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors

KEPLER COMPUTING INC10 citations94

US11521667B1Dec 6, 2022

Stacked ferroelectric planar capacitors in a memory bit-cell

KEPLER COMPUTING INC11 citations94

US11501813B1Nov 15, 2022

Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell

KEPLER COMPUTING INC11 citations94

US11955512B1Apr 9, 2024

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication

KEPLER COMPUTING INC3 citations86

US11521666B1Dec 6, 2022

High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors

KEPLER COMPUTING INC6 citations86

US11527277B1Dec 13, 2022

High-density low voltage ferroelectric memory bit-cell

KEPLER COMPUTING INC3 citations84

US11527278B1Dec 13, 2022

Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths

KEPLER COMPUTING INC0 citations73

US11810608B1Nov 7, 2023

Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell

KEPLER COMPUTING INC0 citations63

US11605411B1Mar 14, 2023

Non-linear polar material based multi-memory element bit-cell with multi-level storage

KEPLER COMPUTING INC0 citations63

US12094923B2Sep 17, 2024

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

KEPLER COMPUTING INC0 citations62

US12034086B1Jul 9, 2024

Trench capacitors with continuous dielectric layer and methods of fabrication

KEPLER COMPUTING INC0 citations62

US12029043B1Jul 2, 2024

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication

KEPLER COMPUTING INC0 citations62

US12022662B1Jun 25, 2024

Planar and trench capacitors for logic and memory applications and methods of fabrication

KEPLER COMPUTING INC0 citations62

US12016185B1Jun 18, 2024

Planar and trench capacitors for logic and memory applications

KEPLER COMPUTING INC0 citations62

US11996438B1May 28, 2024

Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication

KEPLER COMPUTING INC0 citations62

US11985832B1May 14, 2024

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications

KEPLER COMPUTING INC0 citations62

US11961877B1Apr 16, 2024

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures

KEPLER COMPUTING INC0 citations62

US11908704B2Feb 20, 2024

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

KEPLER COMPUTING INC0 citations62

US11894417B2Feb 6, 2024

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

KEPLER COMPUTING INC0 citations62

US11769790B2Sep 26, 2023

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors

KEPLER COMPUTING INC0 citations62

PANDEY PRATYUSH

Patents

Stacked ferroelectric non-planar capacitors in a memory bit-cell

Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels

High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors

Stacked ferroelectric planar capacitors in a memory bit-cell

Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication

High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors

High-density low voltage ferroelectric memory bit-cell

Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths

Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell

Method of forming stacked ferroelectric planar capacitors in a memory bit-cell

Non-linear polar material based differential multi-memory element bit-cell

Non-linear polar material based differential multi-memory element gain bit-cell

Non-linear polar material based multi-memory element bit-cell with multi-level storage

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

Trench capacitors with continuous dielectric layer and methods of fabrication

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication

Planar and trench capacitors for logic and memory applications and methods of fabrication

Planar and trench capacitors for logic and memory applications

Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors