Inventor
WU JASON Y
US17 patents
Patents
17 patentsUS11659714B1May 23, 2023
Ferroelectric device film stacks with texturing layer, and method of forming such
KEPLER COMPUTING INC27 citations93
US11955512B1Apr 9, 2024
Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication
KEPLER COMPUTING INC3 citations86
US12094923B2Sep 17, 2024
Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices
KEPLER COMPUTING INC0 citations62
US12034086B1Jul 9, 2024
Trench capacitors with continuous dielectric layer and methods of fabrication
KEPLER COMPUTING INC0 citations62
US12029043B1Jul 2, 2024
Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication
KEPLER COMPUTING INC0 citations62
US12022662B1Jun 25, 2024
Planar and trench capacitors for logic and memory applications and methods of fabrication
KEPLER COMPUTING INC0 citations62
US12016185B1Jun 18, 2024
Planar and trench capacitors for logic and memory applications
KEPLER COMPUTING INC0 citations62
US11996438B1May 28, 2024
Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication
KEPLER COMPUTING INC0 citations62
US11985832B1May 14, 2024
Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications
KEPLER COMPUTING INC0 citations62
US11961877B1Apr 16, 2024
Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures
KEPLER COMPUTING INC0 citations62
US11908704B2Feb 20, 2024
Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies
KEPLER COMPUTING INC0 citations62
US11894417B2Feb 6, 2024
Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies
KEPLER COMPUTING INC0 citations62
US11769790B2Sep 26, 2023
Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors
KEPLER COMPUTING INC0 citations62
US11744081B1Aug 29, 2023
Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such
KEPLER COMPUTING INC0 citations61
US11716858B1Aug 1, 2023
Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such
KEPLER COMPUTING INC0 citations61
US11832451B1Nov 28, 2023
High density ferroelectric random access memory (FeRAM) devices and methods of fabrication
KEPLER COMPUTING INC0 citations60
US12262543B1Mar 25, 2025
High density ferroelectric random access memory (FeRAM) devices and methods of fabrication
KEPLER COMPUTING INC0 citations58