Inventor
WANG CHEN-HAN
TW28 patents
Patents
28 patentsUS12119404B2Oct 15, 2024
Gate all around structure with additional silicon layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11430891B2Aug 30, 2022
Gate all around structure with additional silicon layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11264485B2Mar 1, 2022
Spacer structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10438948B2Oct 8, 2019
Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11688766B2Jun 27, 2023
Seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11296187B2Apr 5, 2022
Seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11942358B2Mar 26, 2024
Low thermal budget dielectric for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12412779B2Sep 9, 2025
Bilayer seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369388B2Jul 22, 2025
Semiconductor devices with tunable low-K inner air spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363980B2Jul 15, 2025
Spacer structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12360153B2Jul 15, 2025
In-line device electrical property estimating method and test structure of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324200B2Jun 3, 2025
Seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094952B2Sep 17, 2024
Air spacer formation with a spin-on dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901220B2Feb 13, 2024
Bilayer seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848238B2Dec 19, 2023
Methods for manufacturing semiconductor devices with tunable low-k inner air spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735666B2Aug 22, 2023
Gate all around structure with additional silicon layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626482B2Apr 11, 2023
Air spacer formation with a spin-on dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11502166B2Nov 15, 2022
Seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11480606B2Oct 25, 2022
In-line device electrical property estimating method and test structure of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11063042B2Jul 13, 2021
Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12501687B2Dec 16, 2025
Dual silicide layers in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12308312B2May 20, 2025
Interconnect structure and method for manufacturing the interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11637062B2Apr 25, 2023
Interconnect structure and method for manufacturing the interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11257753B2Feb 22, 2022
Interconnect structure and method for manufacturing the interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12532716B2Jan 20, 2026
Low thermal budget dielectric for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12376321B2Jul 29, 2025
Semiconductor device with silicide structures surrounding epitaxial structures and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10461079B2Oct 29, 2019
Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9496398B2Nov 15, 2016
Epitaxial source/drain regions in FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52