Inventor
HO TSAI-JUNG
TW26 patents
Patents
26 patentsUS9859386B2Jan 2, 2018
Self aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD496 citations99
US9548366B1Jan 17, 2017
Self aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD583 citations99
US9818846B2Nov 14, 2017
Selectively deposited spacer film for metal gate sidewall protection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9478623B2Oct 25, 2016
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11289417B2Mar 29, 2022
Semiconductor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11164789B1Nov 2, 2021
Method for forming semiconductor device that includes covering metal gate with multilayer dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742399B2Aug 29, 2023
Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drain
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11355399B2Jun 7, 2022
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11164948B2Nov 2, 2021
Field-effect transistor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations70
US12564028B2Feb 24, 2026
Dielectric layers having nitrogen-containing crusted surfaces
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471357B2Nov 11, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12368098B2Jul 22, 2025
Methods of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154973B2Nov 26, 2024
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107163B2Oct 1, 2024
Semiconductor device structure having dislocation stress memorization and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094952B2Sep 17, 2024
Air spacer formation with a spin-on dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087838B2Sep 10, 2024
Self-aligned contact hard mask structure of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11973027B2Apr 30, 2024
Semiconductor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728218B2Aug 15, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626482B2Apr 11, 2023
Air spacer formation with a spin-on dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12293947B2May 6, 2025
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12255240B2Mar 18, 2025
Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11842930B2Dec 12, 2023
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302595B2May 13, 2025
Dummy hybrid film for self-alignment contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9887090B2Feb 6, 2018
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865709B2Jan 9, 2018
Selectively deposited spacer film for metal gate sidewall protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12417948B2Sep 16, 2025
Hybrid film scheme for self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50