Inventor

UENO TETSUJI

TW32 patents

⚠️ This page may combine multiple inventors who share the name “UENO TETSUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UENO TETSUJI

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same

Methods of fabricating a semiconductor device using a selective epitaxial growth technique

Method of fabricating MOS transistor having epitaxial region

Transistor and method of manufacturing the same

Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same

Semiconductor device including field effect transistor and method of forming the same

Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device

Semiconductor device

CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same

Method of fabricating CMOS transistor and CMOS transistor fabricated thereby

Method of forming MOS transistor having fully silicided metal gate electrode

Transistors for semiconductor device and methods of fabricating the same

Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same

Methods of forming NMOS/PMOS transistors with source/drains including strained materials

TAIWAN SEMICONDUCTOR MFG CO LTD

Epitaxial growth methods and structures thereof

Seal material for air gaps in semiconductor devices

Seal material for air gaps in semiconductor devices

Bilayer seal material for air gaps in semiconductor devices

Semiconductor devices with tunable low-K inner air spacers

Epitaxial growth methods and structures thereof

Seal material for air gaps in semiconductor devices

Air spacer formation with a spin-on dielectric material

Bilayer seal material for air gaps in semiconductor devices

Methods for manufacturing semiconductor devices with tunable low-k inner air spacers

Air spacer formation with a spin-on dielectric material

Seal material for air gaps in semiconductor devices

Epitaxial growth methods and structures thereof

Epitaxial growth methods and structures thereof

FUJITSU LTD

Semiconductor device and complementary semiconductor device

SUMITOMO ELECTRIC INDUSTRIES

Probe

KIM MYUNG-SUN

Semiconductor device including field effect transistor and method of forming the same

UENO TETSUJI

Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same